Methods for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, comprising:
 forming a plurality of light-emitting elements on a first substrate;   forming a first pattern array on a second substrate;   transferring the plurality of light-emitting elements from the first substrate to the second substrate;   forming the first pattern array on a third substrate;   transferring the plurality of light-emitting elements from the second substrate to the third substrate;   forming a second pattern array on a fourth substrate; and   transferring the plurality of light-emitting elements from the third substrate to the fourth substrate,   wherein a pitch between the plurality of light-emitting elements on the first substrate is different than a pitch of the first pattern array.   
     
     
         2 . The method as claimed in  claim 1 , wherein the pitch of the first pattern array is n times larger than a pitch of the second pattern array, and wherein n is a positive integer. 
     
     
         3 . The method as claimed in  claim 1 , wherein the first pattern array comprises an adhesive layer. 
     
     
         4 . The method as claimed in  claim 3 , wherein the step of transferring the plurality of light-emitting elements from the second substrate to the third substrate comprises:
 reducing an adhesion force of a portion of the adhesive layer.   
     
     
         5 . The method as claimed in  claim 3 , wherein the adhesive layer is formed on a first portion of the second substrate and not formed on a second portion of the second substrate. 
     
     
         6 . The method as claimed in  claim 5 , wherein after the step of transferring the plurality of light-emitting elements from the first substrate to the second substrate, the plurality of light-emitting elements are transferred to the first portion of the second substrate rather than the second portion of the second substrate. 
     
     
         7 . The method as claimed in  claim 1 , wherein a material of the second substrate is conductive. 
     
     
         8 . The method as claimed in  claim 6 , wherein the second substrate is grounded. 
     
     
         9 . The method as claimed in  claim 1 , wherein a material of the third substrate is conductive. 
     
     
         10 . The method as claimed in  claim 8 , wherein the third substrate is grounded. 
     
     
         11 . A method for manufacturing a semiconductor device, comprising:
 forming a plurality of light-emitting elements on a first substrate;   providing a second substrate;   transferring the plurality of light-emitting elements from the first substrate to the second substrate;   forming an adhesive layer on a third substrate;   transferring the plurality of light-emitting elements from the second substrate to the third substrate;   providing a fourth substrate; and   reducing the adhesion force of a portion of the adhesive layer, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate.   
     
     
         12 . The method as claimed in  claim 11 , wherein a material of the third substrate is conductive. 
     
     
         13 . The method as claimed in  claim 12 , wherein the third substrate is grounded. 
     
     
         14 . The method as claimed in  claim 11 , wherein the step of reducing the adhesion force of the portion of the adhesive layer is performed by heating or illuminating the portion of the adhesive layer. 
     
     
         15 . The method as claimed in  claim 11 , wherein after the step of transferring the plurality of light-emitting elements from the third substrate to the fourth substrate, a first portion of the plurality of light-emitting elements are transferred to the fourth substrate, and a second portion of the plurality of light-emitting elements remain on the third substrate. 
     
     
         16 . The method as claimed in  claim 11 , wherein a material of the second substrate is conductive. 
     
     
         17 . The method as claimed in  claim 16 , wherein the second substrate is grounded. 
     
     
         18 . The method as claimed in  claim 11 , wherein the step of transferring the plurality of light-emitting elements from the first substrate to the second substrate is performed by a laser lift off process. 
     
     
         19 . The method as claimed in  claim 11 , further comprising:
 forming a first pattern array on the second substrate,   wherein a pitch of the first pattern array is different than a pitch between the plurality of light-emitting elements on the first substrate.   
     
     
         20 . The method as claimed in  claim 19 , further comprising:
 forming a second pattern array on the fourth substrate, wherein the pitch of the first pattern array is different than a pitch of the second pattern array.