Trace anywhere interconnect

Abstract

The present invention provides for a method and structure for forming three-dimensionally routed dielectric wires between discrete points on the two or more parallel circuit planes. The wires may be freely routed in three-dimensional space as to create the most efficient routing between the two arbitrarily defined points on the two or more parallel circuit planes. Metalizing the outer surfaces of these three dimensional dielectric wires electrically coupling the discrete wires to their respective discrete contact points. Two or more of these wires may be in intimate contact to one another electrically coupling to each other as well as to two or more discrete contact pads. These electrically coupled contact pads may be on opposite sides or on the same side of the structure and the formed metalized wires may originate on one side and terminate on the other or originate and terminate from the same side.

What is claimed: 
     
         1 . An electrical interconnect mechanism comprising:
 two or more discrete contact points such as but not limited to circuit pads within two or more circuit planes; and   three-dimensional dielectric wires routed between said discrete points on said two or more circuit planes in order to provide electrical coupling of two or more electrical devices through said interconnect mechanism, said dielectric wires having an electrically conductive coating.   
     
     
         2 . The interconnect mechanism to  claim 1  wherein said circuit planes are substantially parallel to each other. 
     
     
         3 . The interconnect mechanism according to  claim 1  further comprising outer surfaces of said dielectric wires being metalized for electrically coupling to their respective discrete contact points with any conductive material organic or inorganic. 
     
     
         4 . The interconnect mechanism according to  claim 3  wherein said conductive material is copper, silver, gold, or conductive polymer. 
     
     
         5 . The interconnect mechanism according to  claim 3  further comprising placing two or more of said wires placed into intimate contact with one another electrically coupling each other as well as to two or more of said discrete contact pads. 
     
     
         6 . The interconnect mechanism according to  claim 5  wherein said electrically coupled contact pads may be on opposite sides or on a same side of the structure and the formed metalized wires may originate on one side and terminate on the other or originate and terminate from the same side. 
     
     
         7 . The interconnect mechanism according to  claim 1  wherein a second coating of dielectric is formed on metalized surfaces of the discrete wires to approximate a coaxial wire. 
     
     
         8 . The interconnect mechanism according to  claim 1  wherein said formed and metalized dielectric wires are electrically coupled through the metallization process to discrete metallic circuits on the two or more planes or the discrete parallel circuits are formed as an integral part of the formed dielectric wires and then metalized along with the dielectric wires. 
     
     
         9 . The interconnect mechanism according to  claim 7  wherein the formed second coating of dielectric and metallization of the wires, the second metallization on the coated wire is limited to just short of making contact to the discrete circuit elements on either of said planes. 
     
     
         10 . The interconnect mechanism according to  claim 9  wherein said metallization is recessed from the discrete circuit elements in are range of 1 um to 50 um. 
     
     
         11 . The interconnect mechanism according to  claim 1  further comprising the steps of:
 a dielectric wall or plane in the z-axis or vertically in the structure is formed adjacent to the discrete circuit wires instead of forming ground shielding around the discrete circuit wires, transposed between the outer surface circuit planes, metalized with the end points electrically coupled to the discrete circuits patterns on one or both planes. 
 
     
     
         12 . The interconnect mechanism according to  claim 11  further comprising said vertical planes are tied to ground to provide for shielding of adjacently routed circuit wires as well as the ability to control the impedance of these wires. 
     
     
         13 . The interconnect mechanism according to  claim 1  wherein said wires are formed with a core of metal in lieu of dielectric and then a dielectric is coated on them. 
     
     
         14 . The interconnect mechanism according to  claim 13  wherein said wires are formed with a core of metal in lieu of dielectric and coated with dielectric and then said wires are metalized. 
     
     
         15 . The interconnect mechanism according to  claim 1  wherein a rigid body is formed between said two or more circuit planes by filling an area between the planes with a dielectric. 
     
     
         16 . The interconnect mechanism according to  claim 15  wherein said dielectric includes epoxy and air. 
     
     
         17 . The interconnect mechanism according to  claim 1  wherein said dielectric is epoxy. 
     
     
         18 . The interconnect mechanism according to  claim 15  wherein said fill material extends to a bottom of the circuit elements making the elements superior. 
     
     
         19 . The interconnect mechanism according to  claim 15  wherein said fill material extends to a top of the circuit elements making the elements flush to the fill material. 
     
     
         20 . The interconnect mechanism according to  claim 15  wherein said aforementioned process is repeated with one of the circuit planes of the previously formed interconnect acting as one of the planes for a next sequentially formed build-up circuit plane connected by said formed wires. 
     
     
         21 . The interconnect mechanism according to  claim 1  wherein a compliant body is formed between said two or more circuit planes by filling an area between the planes with a compliant material to provide alignment of the three dimensional wires and circuitry end points to their desired location as well as allowing for z-axis compliance in order to allow for electrical coupling of two non-coplanar surfaces intended to be coupled by said electrical interconnect mechanism. 
     
     
         22 . The interconnect mechanism according to  claim 21  wherein said complaint material is an elastomeric material. 
     
     
         23 . The interconnect mechanism according to  claim 1  further comprising a scaffolding formed in or around the interconnect with a least amount of material in intimate contact with each of the circuit elements on each of the planes transposed between both circuit planes maintaining the z-axis spacing between each plane as well as the x-y location of each of the circuit elements, said scaffolding structure providing the interconnect with a rigid structure while maintaining a greater amount of air around the formed circuits wires. 
     
     
         24 . The interconnect mechanism according to  claim 23  wherein the greater amount of air can range between 1% and 99% more air than solid epoxy fill within area between said circuit elements. 
     
     
         25 . The interconnect mechanism according to  claim 23  wherein said least amount of material is epoxy. 
     
     
         26 . The interconnect mechanism according to  claim 23  wherein there is within or around said interconnect a scaffolding of dielectric, dielectric posts or a solid dielectric block short of the z axis height of the parallel circuit planes wherein penetrations are provided in said scaffolding to permit entry of the wires so that when used in conjunction with a filled elastomeric material, said dielectric structure provides a fixed compression stop of the interconnect structure to prevent damage to the wires due to over compression. 
     
     
         27 . The interconnect mechanism according to  claim 1  wherein said wires are configured as a free flow of the three dimensionally formed wires by being formed with S curves, cantilevered shapes or coiled shapes to allow for the compliance of the wires while resisting stress cracking in the metal and or dielectric. 
     
     
         28 . The interconnect mechanism according to  claim 1  wherein a lattice work of non-conductive dielectric scaffolding transposed between the two circuit planes in intimate contact to the circuit elements within the circuit planes is provided which both provides for alignment of the individual contact points or circuit elements within the circuit planes and either providing rigidity for the entire structure or allowing for some compliance of the entire structure in the z-axis, while also allowing for air dielectric around the aforementioned wires. 
     
     
         29 . The interconnect mechanism according to  claim 1  further comprising two or more terminal points of a electronic component affixed and electrically coupled to the formed wires and the corresponding circuit elements of the corresponding planes, each point coupled to its corresponding designated power, ground, or signal wires and or circuit elements in the interconnect structure so that the electronic component's function is provided to the points of the electrical devices the interconnect is intended to couple. 
     
     
         30 . The interconnect mechanism according to  claim 29  wherein said electronic component is a capacitor. 
     
     
         31 . The interconnect mechanism according to  claim 29  wherein said electronic component is a resistor. 
     
     
         32 . The interconnect mechanism according to  claim 29  wherein said electronic component is an inductor. 
     
     
         33 . The interconnect mechanism according to  claim 29  wherein the electronic components terminal points are coupled to its corresponding power, ground or signal wires in the interconnect structure so that said component terminal points are provided to the points of the electrical devices the interconnect is intended to couple. 
     
     
         34 . The interconnect mechanism according to  claim 1  wherein said wires extend beyond a rigid body of the interconnect with shapes conducive for flexing and end points conducive for contacting various shapes of electrical devices acting as a compliant interconnect coupling two non-coplanar electrical devices providing the ability for pitch translation and pin remapping as well as compliant probing in one integrated structure. 
     
     
         35 . The interconnect mechanism according to  claim 1  wherein said interconnect structure is built with one or more silicon wafer ICs' creating multi chip modules interconnecting the two or more ICs' where a silicon layer is the base circuit plane. 
     
     
         36 . The interconnect mechanism according to  claim 1  wherein said interconnect structure is built with one or more silicon wafer ICs' creating a redistribution packaging for the IC. 
     
     
         37 . The interconnect mechanism according to  claim 1  wherein said interconnect structure is built on a flexible circuit base.