Substrate unit, display device and method for manufacturing display device
Abstract
A substrate unit, a display device, and a method for manufacturing the display device are disclosed. The substrate unit includes a carrier plate, a glass substrate and an interlayer disposed between the carrier plate and the glass substrate. The thickness of the glass substrate is less than that of the carrier plate, and the thickness of the interlayer is less than that of the glass substrate. The display device includes a first glass substrate, a second glass substrate, a device layer and a sealing layer. The device layer and the sealing layer are disposed between the first glass substrate and the second glass substrate, wherein the sealing layer, the first glass substrate and the second glass substrate form an enclosed space, and the device layer is disposed in the enclosed space. The thickness of the first glass substrate is between 0.05 mm and 0.3 mm.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate unit, comprising:
a carrier plate; a glass substrate; and an interlayer disposed between the carrier plate and the glass substrate; wherein the thickness of the glass substrate is less than that of the carrier plate, and the thickness of the interlayer is less than that of the glass substrate.
2 . The substrate unit of claim 1 , wherein the thickness of the glass substrate is between 0.05 mm and 0.3 mm, and the thickness of the interlayer is between 0.01 μm and 2 μm.
3 . The substrate unit of claim 1 , wherein the interlayer has a release surface adjacent to the glass substrate, and an adhesion force between the interlayer and the carrier plate is greater than that between the interlayer and the glass substrate.
4 . The substrate unit of claim 3 , wherein a water contact angle of the release surface is between 40° and 90°.
5 . The substrate unit of claim 1 , wherein the material of the interlayer is a metal, a metal oxide, a silicon oxide, an organosilicon compound, an organotitanium compound, an organoaluminum compound, or an organic polymer.
6 . The substrate unit of claim 1 , further comprising:
a function layer disposed on the carrier plate and on the lateral peripheries of the interlayer and the glass substrate.
7 . The substrate unit of claim 6 , wherein the function layer connects the carrier plate and the glass substrate.
8 . The substrate unit of claim 1 , further comprising:
a function layer covering the lateral periphery and the upper surface of the interlayer and disposed between the interlayer and the glass substrate.
9 . A display device, comprising:
a first glass substrate; a second glass substrate; a device layer disposed between the first glass substrate and the second glass substrate; and a sealing layer disposed between the first glass substrate and the second glass substrate, wherein the sealing layer, the first glass substrate, and the second glass substrate form an enclosed space, and the device layer is disposed in the enclosed space; wherein the thickness of the first glass substrate is between 0.05 mm and 0.3 mm.
10 . The display device of claim 9 , wherein the thickness of the second glass substrate is between 0.05 mm and 0.3 mm, and an exterior surface of the first glass substrate or the second glass substrate is a smooth surface without etched dimples.
11 . The display device of claim 9 , further comprising:
an electrode layer disposed on an exterior surface of the second glass substrate away from the first glass substrate.
12 . A method for manufacturing a display device, comprising:
providing a carrier plate and forming an interlayer on the carrier plate; disposing a substrate on the interlayer to form a substrate unit; and forming a device layer on the substrate to obtain a device substrate, wherein a thickness of the substrate is less than a thickness of the carrier plate, and a thickness of the interlayer is less than the thickness of the substrate.
13 . The method of claim 12 , wherein the device layer comprises at least one of thin film transistors, organic light emitting diode units, touch devices, or a color filter layer.
14 . The method of claim 13 , wherein a material of the at least one of thin film transistors comprises amorphous silicon, amorphous indium gallium zinc oxide, c-axis aligned crystal indium gallium zinc oxide, or low temperature poly silicon.
15 . The method of claim 12 , wherein the interlayer has a release surface adjacent to the substrate, and an adhesion force between the interlayer and the carrier plate is greater than that between the interlayer and the substrate.
16 . The method of claim 15 , wherein a water contact angle of the release surface is between 40 degrees and 90 degrees.
17 . The method of claim 12 , wherein a material of the interlayer is a metal, a metal oxide, a silicon oxide, an organosilicon compound, an organotitanium compound, an organoaluminum compound, or an organic polymer.
18 . The method of claim 12 , wherein the interlayer is formed on the carrier plate by dip coating, roll coating, print coating, or spin coating.
19 . The method of claim 12 , wherein the substrate is flexible.Cited by (0)
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