Laser diode enhancement device

Abstract

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.

1 . The laser of  claim 15 , the laser further including a DBR mirror and at least one quantum well in the DBR mirror. 
     
     
         2 . The laser of  claim 1 , including a laser beam output that is back propagated for emitting a large sized Gaussian beam with high encircled energy. 
     
     
         3 . The laser of  claim 1 , wherein the DBR mirror has a plurality of GaAs/AlGaAs layers. 
     
     
         4 . The laser of  claim 1  wherein the quantum well is composed of AlGaAs/InGaAs. 
     
     
         5 . The laser of  claim 14  wherein the CGH comprises GaAs/AlGaAs. 
     
     
         6 . (canceled) 
     
     
         7 . The laser of  claim 14  wherein there are at least 20 cascaded CGHs. 
     
     
         8 . The laser of  claim 14  wherein there are more than 20 cascaded CGHs. 
     
     
         9 . The laser of  claim 14  where each CGH comprises GaAs/AlGaAs. 
     
     
         10 . (canceled) 
     
     
         11 . The laser of  claim 15  having a laser gain medium that is semiconductor. 
     
     
         12 . The laser of  claim 15  having a laser gain medium that is crystal. 
     
     
         13 . The laser of  claim 15  having a laser gain medium that is gas. 
     
     
         14 . A vertical cavity surface emitting semiconductor laser, with an intra-cavity wavefront shaping device comprising a plurality of CGHs at one end of the cavity, with each CGH having a plurality of cascaded layers with a buffer layer between each cascaded layer. 
     
     
         15 . A vertical cavity surface emitting semiconductor laser, comprising a plurality of wavefront shaping devices, within a cavity said wavefront shaping devices being diffractive elements consisting of a plurality of interior CGHs at an end of the cavity; said CGHs each having a plurality of cascaded layers with a buffer layer between each layer. 
     
     
         16 . The device of  claim 15  wherein the diffractive elements comprises 2-20 layers of AlGaAs with buffer layers of GaAs.