US2019103152A1PendingUtilityA1

Memory Module and Memory System

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Assignee: LONGITUDE SEMICONDUCTOR SARLPriority: Apr 21, 2003Filed: Dec 3, 2018Published: Apr 4, 2019
Est. expiryApr 21, 2023(expired)· nominal 20-yr term from priority
G11C 5/00F24C 15/2035H10W 90/724H10W 90/722H10W 90/297H10W 72/07251H10W 72/29H10W 72/20H10W 90/00H10W 70/635H10W 70/611G11C 29/48G11C 11/408G11C 5/06G11C 8/12G11C 29/1201G11C 5/04G11C 29/26G11C 7/1063G11C 7/1051H01L 2224/0401H01L 2225/06517H01L 25/18H01L 23/5384H01L 2224/16H01L 2224/16145H01L 2225/06513H01L 2924/00014H01L 2225/06541H01L 25/0657
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Claims

Abstract

In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A memory module comprising:
 a system input/output terminal via which a system data signal having a predetermined data width is input/output and   a plurality of memory chips which transmit/receive an internal data signal broader than the system input/output terminal, the memory module further comprising:
 an IO chip including a function of performing conversion between the system data signal and the internal data signal in the system input/output terminal, the plurality of memory chips being stacked on the IO chip and being connected to the IO chip via through electrodes extending through the plurality of stacked memory chips.

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