Substrate treating apparatus and substrate treating method

Abstract

A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

What is claimed is: 
     
         1 . A substrate treating apparatus comprising:
 a support member to support a substrate;   a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member; and   a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section having an average discharge amount per hour which is more than an average discharge amount per hour in the low-flow-supply section.   
     
     
         2 . The substrate treating apparatus of  claim 1 , wherein the controller controls the treatment liquid nozzle to stop discharging the treatment liquid in the low-flow-supply section. 
     
     
         3 . The substrate treating apparatus of  claim 1 , further comprising:
 a heating member to heat the substrate positioned on the support member;   
     
     
         4 . The substrate treating apparatus of  claim 3 , wherein the controller controls the heating member such that a heating temperature of the heating member in the high-flow-supply section is lower than a heating temperature of the heating member in the low-flow-supply section. 
     
     
         5 . The substrate treating apparatus of  claim 3 , wherein the heating member is provided as a lamp mounted on the support member. 
     
     
         6 . The substrate treating apparatus of  claim 3 , wherein the heating member is provided as a resistance-heating type of hot wire positioned mounted on the support member. 
     
     
         7 . The substrate treating apparatus of  claim 3 , wherein the heating member is provided as a laser source to irradiate a laser to the support member. 
     
     
         8 . The substrate treating apparatus of  claim 7 , wherein the heating member irradiates the laser in a form of a line beam throughout a region between a rotation center of the substrate and an end portion of the substrate. 
     
     
         9 . The substrate treating apparatus of  claim 1 , wherein the treatment liquid is phosphoric acid. 
     
     
         10 . The substrate treating apparatus of  claim 1 , wherein the support member is rotatably provided, and
 wherein the controller controls the support member such that a rotation speed of the support member in the high-flow-supply section is higher than a rotation speed of the support member in the low-flow supply section   
     
     
         11 . A substrate treating method comprising:
 treating a substrate by supplying a treatment liquid to the substrate,   wherein the treatment liquid is differently supplied to the substrate in a low-flow-supply section and a high-flow-supply section having an average discharge amount per hour which is more than an average discharge amount per hour in the low-flow-supply section.   
     
     
         12 . The substrate treating method of  claim 11 , wherein the average discharge amount per hour in the low-flow-supply section is equal to or less than half of the average discharge amount per hour in the high-low-supply section. 
     
     
         13 . The substrate treating method of  claim 11 , wherein discharging the treatment liquid to the substrate is stopped in the low-flow-supply section. 
     
     
         14 . The substrate treating method of  claim 11 , wherein the substrate is heated at a higher temperature in the low-flow-supply section than a temperature in the high-flow-supply section. 
     
     
         15 . The substrate treating method of  claim 11 , wherein the substrate is rotated at a higher rotation speed in the high-flow-supply section than a rotation speed in the low-flow-supply section. 
     
     
         16 . The substrate treating method of  claim 11 , wherein the treatment liquid is phosphoric acid.