Pixel unit and imaging device

Abstract

An pixel unit includes a photoelectric conversion element, a transfer transistor having a transfer gate abutting on the photoelectric conversion element, and a floating diffusion region on which the transfer gate abuts, wherein the transfer gate includes a first gate portion having a first gate width in a gate width direction, the first gate portion abutting on the floating diffusion region and extending away from the floating diffusion region in a gate length direction, and a second gate portion having a second gate width narrower than the first gate width in the gate width direction, the second gate portion extending continuously from the first gate portion in the gate length direction, and wherein a width of the second gate portion gradually decreases from the first gate width to the second gate width toward a direction away from the first gate portion.

What is claimed is: 
     
         1 . A pixel unit, comprising:
 a photoelectric conversion element;   a transfer gate abutting on the photoelectric conversion element and having a portion thereof surrounded by the photoelectric conversion element in a plan view; and   a floating diffusion region abutting on another portion of the transfer gate which is not surrounded by the photoelectric conversion element in the plan view,   wherein the portion of the transfer gate surrounded by the photoelectric conversion element is configured not to broaden away from the floating diffusion region and to have a region thereof situated away from the floating diffusion region that gradually narrows away from the floating diffusion region.   
     
     
         2 . The pixel unit according to  claim 1 , wherein the region of the transfer gate situated away from the floating diffusion region is tapered. 
     
     
         3 . The pixel unit according to  claim 1 , wherein the transfer gate has a plan shape made by cutting off two corners of a rectangle among four corners thereof, the two corners being situated away from the floating diffusion region. 
     
     
         4 . The pixel unit according to  claim 1 , wherein the photoelectric conversion element, the transfer gate, and the floating diffusion region are aligned in line. 
     
     
         5 . The pixel unit according to  claim 1  wherein the floating diffusion region includes a first diffusion region and second diffusion regions, the first diffusion region having an impurity concentration different than the second diffusion regions, and wherein the first diffusion region has a higher impurity concentration than the second diffusion regions, and the first diffusion region is situated in contact with and between the second diffusion regions. 
     
     
         6 . The pixel unit according to  claim 1 , further comprising a reset transistor coupled to the floating diffusion region and configured to reset electric charge accumulated in the floating diffusion region. 
     
     
         7 . The pixel unit according to  claim 1 , further comprising an amplifier transistor coupled to the floating diffusion region and configured to amplify a voltage of the floating diffusion region. 
     
     
         8 . The pixel unit according to  claim 1 , wherein the transfer gate further includes an extension part projecting over the floating diffusion region. 
     
     
         9 . An imaging device comprising a plurality of pixel units each having a configuration of the pixel unit of  claim 1 , wherein some of the pixel units are aligned in a first direction, to form any given one of a plurality of pixel unit lines, and the plurality of pixel unit lines are arranged side by side in a second direction perpendicular to the first direction. 
     
     
         10 . The imaging device according to  claim 9 , wherein some of the pixel units that form one of the plurality of pixel unit lines are coupled to a same signal line configured to read electric signals from said some of the pixel units.