Method of mass transferring electronic device

Abstract

A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

What is claimed is: 
     
         1 . A method of mass transferring electronic devices, comprising:
 providing a carrying substrate, the carrying substrate having a plurality of bonding electrode pairs formed on a first surface thereof;   providing a wafer comprising a substrate and a plurality of light emitting diodes (LEDs) grown on the substrate, wherein each of the LEDs has an electrode pair exposed upwards;   flipping the wafer and making the LEDs face to the first surface of the carry substrate;   aligning and boning the electrode pair of at least one LED to at least one of the bonding electrode pairs; and   detaching the at least one bonded LED from the substrate of the wafer.   
     
     
         2 . The method of mass transferring electronic devices according to  claim 1 , wherein the step of detaching the at least one bonded LED from the substrate of the wafer is performed by using a laser lift-off method, a photochemical reaction method or a photophysical reaction method. 
     
     
         3 . The method of mass transferring electronic devices according to  claim 1 , wherein after the step of detaching the at least one bonded LED from the substrate of the wafer, a surface on the at least one bonded LED is exposed and a metal is generated on the surface and then the metal is removed. 
     
     
         4 . The method of mass transferring electronic devices according to  claim 1 , wherein the step of boning the electrode pair of at least one LED to at least one of the bonding electrode pairs is performed by using an anisotropic conductive film (ACF). 
     
     
         5 . The method of mass transferring electronic devices according to  claim 1 , wherein the step of boning the electrode pair of at least one LED to at least one of the bonding electrode pairs is performed by using a eutectic bonding or a solder process. 
     
     
         6 . The method of mass transferring electronic devices according to  claim 1 , wherein the step of boning the electrode pair of at least one LED to at least one of the bonding electrode pairs is performed by using a thermocompression. 
     
     
         7 . The method of mass transferring electronic devices according to  claim 6 , wherein the thermocompression comprises a reflow process using a solder. 
     
     
         8 . The method of mass transferring electronic devices according to  claim 1 , wherein the step of aligning the electrode pair of at least one LED to at least one of the bonding electrode pairs is performed by aligning a first mark of the wafer to the second mark of the carrying substrate. 
     
     
         9 . The method of mass transferring electronic devices according to  claim 1 , wherein a number of the LEDs grown on the wafer falls within a range of 1 to 5×10 6 .