Adjustable Mass Resolving Aperture

Abstract

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

What is claimed is: 
     
         1 . An ion implantation system, comprising:
 an ion source configured to generate an ion beam having a plurality of ions that propagate along a beam line;   a mass analyzer configured to generate a magnetic field that bends a trajectory of each of the ions within the ion beam such that ions having a lower mass to charge ratio are bent more than ions having a higher mass to charge ratio, wherein the trajectory of each of the ions lies in a corresponding plane;   a mass resolving aperture (MRA), wherein the MRA has an opening;   wherein the MRA is positioned such that a first portion of the ions in the ion beam as the ion beam approaches the MRA pass through the opening and are in the ion beam after the ion beam exits the MRA and the MRA alters a motion of a second portion of the ions in the ion beam as the ion beam approaches the MRA such that the second portion of the ions are not in the ion beam after the ion beam exits the MRA,   wherein a height of the opening, is adjustable, wherein the height is measured in a direction perpendicular to the plane, wherein adjusting the height of the opening alters which ions are in the first portion of the ions.   
     
     
         2 . The ion implantation system according to  claim 1 ,
 wherein a width of the opening in adjustable, wherein the width is measured in a direction lying in the plane, wherein adjusting the width of the opening alters which ions are in the first portion of the ions.   
     
     
         3 . The ion implantation system according to  claim 2 ,
 wherein the MRA comprises:   four sides, wherein at least one side is linearly movable, wherein linearly moving one of more of the at least one linearly movable sides adjusts the height and/or the width.   
     
     
         4 . The ion implantation system according to  claim 3 ,
 wherein a first side of the at least one side is linearly movable in a direction parallel with the direction the width is measured in, wherein linearly moving the first side in the direction parallel with the direction the width is measured in adjusts the width of the opening.   
     
     
         5 . The ion implantation system according to  claim 3 ,
 wherein a first side of the at least one side is linearly movable in a direction parallel with the direction the height is measured in,   wherein linearly moving the first side in the direction parallel with the direction the height is measured in adjusts the height of the opening.   
     
     
         6 . The ion implantation system according to  claim 3 ,
 wherein each of the four sides of the at least one side is linearly movable in a direction parallel with the direction the height is measured in and linearly movable in a direction parallel with the direction the height is measured in.   
     
     
         7 . The ion implantation system according to  claim 6 ,
 wherein any opening size within an opening size operating range can be achieved by linearly moving at least two of the four sides in the direction parallel with the direction the width is measured in and/or in the direction parallel with the direction the height is measured in adjusts the height of the opening.   
     
     
         8 . The ion implantation system according to  claim 6 ,
 wherein for a certain opening size, any opening location within an opening location operating range for the certain size can be achieved by linearly moving at least two of the four sides in the direction parallel with the direction the width is measured in and/or in the direction parallel with the direction the height is measured in adjusts the height of the opening.   
     
     
         9 . The ion implantation system according to  claim 7 ,
 wherein for a certain opening size, any opening location within an opening location operating range for the certain size can be achieved by linearly moving at least two of the four sides in the direction parallel with the direction the width is measured in and/or in the direction parallel with the direction the height is measured in adjusts the height of the opening.   
     
     
         10 . The ion implantation system according to  claim 3 ,
 wherein at least a portion of an edge of at least one side incorporates a fin, wherein the fin has a front surface and a rear surface, wherein a normal to the front surface has a component facing the ion beam as the ion beam approaches the MRA and a normal to the rear surface has a component facing the ion beam as the ion beam exits the MRA, wherein the fin has a leading portion on the front surface that has a normal that is parallel to the direction of the beam path,   wherein the front surface curves away from the leading portion in a direction away from the opening to form an outer convex section of the front surface adjacent the leading portion and an outer concave section of the front surface adjacent the convex section of the front surface.   
     
     
         11 . The ion implantation system according to  claim 10 ,
 wherein the rear surface curves away from the leading portion in a direction toward the opening to form an inner convex section of the rear surface adjacent the leading portion.   
     
     
         12 . The ion implantation system according to  claim 11 ,
 wherein each of the four sides has a corresponding fin along a length of a corresponding edge.   
     
     
         13 . The ion implantation system according to  claim 1 ,
 wherein a path position of the opening in adjustable, wherein the path position is measured in a direction along the beam path,   wherein adjusting the path position of the opening alters which ions are in the first portion of the ions.   
     
     
         14 . The ion implantation system according to  claim 2 ,
 wherein a path position of the opening in adjustable, wherein the path position is measured in a direction along the beam path,   wherein adjusting the path position of the opening alters which ions are in the first portion of the ions.   
     
     
         15 . The ion implantation system according to  claim 1 ,
 wherein the plurality of ions comprises isotopes.