US2019203539A1PendingUtilityA1

Polycrystalline diamond compact

Assignee: SF DIAMOND CO LTDPriority: Mar 14, 2017Filed: Mar 11, 2019Published: Jul 4, 2019
Est. expiryMar 14, 2037(~10.7 yrs left)· nominal 20-yr term from priority
E21B 10/43E21B 10/54E21B 10/5673
39
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Claims

Abstract

A polycrystalline diamond compact including a polycrystalline diamond layer and a cemented carbide substrate. The polycrystalline diamond layer is in the form of a cylinder including an upper surface, a bottom surface, and a side wall connecting the upper surface and the bottom surface. The cemented carbide substrate is bonded to the bottom surface of the polycrystalline diamond layer. The upper surface includes a center part and an edge part. The edge part includes a plurality of radially distributed cutting edges and cutting removal grooves. The plurality of cutting edges and cutting removal grooves are alternately distributed on the upper surface. One end of each of the plurality of cutting edges and cutting removal grooves extends to communicate with the center part, and the other end of each of the plurality of cutting edges and cutting removal grooves extends to communicate with the side wall.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A polycrystalline diamond compact, comprising:
 a polycrystalline diamond layer, the polycrystalline diamond layer being in the form of a cylinder comprising an upper surface, a bottom surface, and a side wall connecting the upper surface and the bottom surface; and   a cemented carbide substrate, the cemented carbide substrate being bonded to the bottom surface of the polycrystalline diamond layer; wherein:   the upper surface comprises a center part and an edge part;   the edge part comprises a plurality of radially distributed cutting edges and cutting removal grooves;   the plurality of cutting edges and cutting removal grooves are alternately disposed on the upper surface; and   one end of each of the plurality of cutting edges and cutting removal grooves extends to communicate with the center part, and the other end of each of the plurality of cutting edges and cutting removal grooves extends to communicate with the side wall.   
     
     
         2 . The polycrystalline diamond compact of  claim 1 , wherein each of the plurality of cutting edges comprises a first side surface and a second side surface, and an included angle between the first side surface and the second side surface is greater than or equal to 90°. 
     
     
         3 . The polycrystalline diamond compact of  claim 1 , wherein the plurality of cutting edges and cutting removal grooves forms an annular structure on the upper surface. 
     
     
         4 . The polycrystalline diamond compact of  claim 1 , wherein a vertical distance from a peak of each of the cutting edges to a lowest point of the cutting removal grooves is greater than or equal to 0.2 mm, and a radial length of each of the cutting edges on the upper surface is greater than or equal to 0.5 mm. 
     
     
         5 . The polycrystalline diamond compact of  claim 1 , wherein chamfers are disposed at a joint between the edge part of the upper part and the side wall. 
     
     
         6 . The polycrystalline diamond compact of  claim 1 , wherein the center part of the upper surface of the polycrystalline diamond layer is provided with a cutting reservoir. 
     
     
         7 . The polycrystalline diamond compact of  claim 6 , wherein one end of each of the plurality of cutting edges and cutting removal grooves extends to communicate with the cutting reservoir. 
     
     
         8 . The polycrystalline diamond compact of  claim 7 , wherein the cutting reservoir is in the shape of circle or square. 
     
     
         9 . The polycrystalline diamond compact of  claim 8 , wherein a depth of the cutting reservoir relative to the upper surface is less than one tenth of a thickness of the polycrystalline diamond layer from the upper surface to the bottom surface.

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