US2019233969A1PendingUtilityA1

Lithium niobate single crystal substrate and method of producing the same

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Assignee: SUMITOMO METAL MINING COPriority: Jun 18, 2015Filed: Apr 6, 2019Published: Aug 1, 2019
Est. expiryJun 18, 2035(~8.9 yrs left)· nominal 20-yr term from priority
Inventors:Tomio Kajigaya
C30B 15/04C30B 29/30C01G 33/00C30B 33/02C01P 2006/40C01P 2006/80C30B 15/00C01G 33/006H10P 95/90H10P 14/3458
69
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Claims

Abstract

A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 Ω·cm to 2×1012 Ω·cm or less.

Claims

exact text as granted — not AI-modified
1 : (canceled) 
     
     
         2 : A method of producing a lithium niobate single crystal substrate by using a lithium niobate single crystal grown by the Czochralski process, wherein
 a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al 2 O 3  and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×10 10  Ω·cm to 2×10 12  Ω·cm or less.   
     
     
         3 : The method of producing a lithium niobate single crystal substrate according to  claim 2 , wherein
 an arithmetic average roughness Ra of a surface of the lithium niobate single crystal processed into the form of the substrate is 0.2 μm or more and 0.4 μm or less.   
     
     
         4 : The method of producing a lithium niobate single crystal substrate according to  claim 2 , wherein
 the heat treatment is conducted in a vacuum atmosphere or in a reduced-pressure atmosphere of an inert gas.   
     
     
         5 : The method of producing a lithium niobate single crystal substrate according to  claim 2 , wherein
 the heat treatment is conducted for 1 hour or more.   
     
     
         6 : The method of producing a lithium niobate single crystal substrate according to  claim 3 , wherein
 the heat treatment is conducted in a vacuum atmosphere or in a reduced-pressure atmosphere of an inert gas.   
     
     
         7 : The method of producing a lithium niobate single crystal substrate according to  claim 3 , wherein
 the heat treatment is conducted for 1 hour or more.   
     
     
         8 : The method of producing a lithium niobate single crystal substrate according to  claim 4 , wherein
 the heat treatment is conducted for 1 hour or more.   
     
     
         9 : The method of producing a lithium niobate single crystal substrate according to  claim 6 , wherein
 the heat treatment is conducted for 1 hour or more.

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