US2019259954A1PendingUtilityA1

Thin film semiconductor comprising a small-molecular semiconducting compound and a non-conductive polymer

Assignee: BASF SEPriority: Aug 28, 2014Filed: May 2, 2019Published: Aug 22, 2019
Est. expiryAug 28, 2034(~8.1 yrs left)· nominal 20-yr term from priority
C07D 471/06H01L 51/0566H01L 51/0053H01L 51/004H10K 85/621H10K 10/488H10K 85/654H10K 85/141
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Claims

Abstract

A thin film semiconductor comprising a compound of formula I or II wherein: R 1 and R 2 , at each occurrence, independently are selected from a C 1-30 alkyl group, a C 2-30 alkenyl group, a C 2-30 alkynyl group and a C 1-30 haloalkyl group, R 3 , R 4 , R 5 , and R 6 independently are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6 is an electron-withdrawing group; and a non-conductive polymer.

Claims

exact text as granted — not AI-modified
1 . A thin film semiconductor comprising a compound of the following formula II: 
       
         
           
           
               
               
           
         
         wherein: 
         R 1  and R 2 , each independently, are selected from the group consisting of a C 1-30  alkyl group, a C 2-30  alkenyl group, a C 2-30  alkynyl group, and a C 1-30  haloalkyl group, 
         R 3 , R 4 , R 5 , and R 6 , each independently, are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6  is an electron-withdrawing group; and 
         a non-conductive polymer. 
       
     
     
         2 . The thin film semiconductor of  claim 1 , wherein R 1  and R 2 , each independently, are selected from the group consisting of a C 1-12  alkyl group and a C 1-12  haloalkyl group. 
     
     
         3 . The thin film semiconductor of  claim 1 , wherein R 3 , R 4 , R 5 , and R 6 , each independently, are selected from the group consisting of H, F, Cl, Br, I, and —CN. 
     
     
         4 . The thin film semiconductor of  claim 1 , wherein each of R 3  and R 4  is Br or —CN and R 5  and R 6  are H. 
     
     
         5 . The thin film semiconductor of  claim 1 , wherein each of R 3  and R 6  is Br or —CN and R 4  and R 5  are H. 
     
     
         6 . The thin film semiconductor of  claim 1 , wherein the compound of the formula II is 
       
         
           
           
               
               
           
         
       
     
     
         7 . The thin film semiconductor of  claim 1 , wherein the non-conductive polymer is poly(methylmethacrylate). 
     
     
         8 . A solution comprising:
 a compound of the following formula II   
       
         
           
           
               
               
           
         
         wherein: 
         R 1  and R 2 , each independently, are selected from the group consisting of a C 1-30  alkyl group, a C 2-30  alkenyl group, a C 2-30  alkynyl group, and a C 1-30  haloalkyl group, 
         R 3 , R 4 , R 5 , and R 6 , each independently, are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6  is an electron-withdrawing group, 
         a non-conductive polymer, and 
         a solvent. 
       
     
     
         9 . The solution according to  claim 8 , wherein the non-conductive polymer is poly(methylmethacrylate).

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