Organic photosensitive devices with exciton-blocking charge carrier filters

Abstract

Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).

1 - 31 . (canceled) 
     
     
         32 . An organic photosensitive optoelectronic device comprising:
 two electrodes in superposed relation comprising an anode and a cathode;   a photoactive region comprising at least one donor material and at least one acceptor material disposed between the two electrodes to form a donor-acceptor heterojunction, wherein the at least one donor material has a Lowest Unoccupied Molecular Orbital energy level (LUMO don ) and a Highest Occupied Molecular Orbital energy level (HOMO don ); and   an exciton-blocking hole filter disposed between the anode and the at least one donor material, wherein the hole filter comprises a mixture comprising at least one anode-side wide energy gap material and at least one hole conducting material, and wherein the at least one anode-side wide energy gap material has:
 a Highest Occupied Molecular Orbital energy level (HOMO AS-WG ) energy level larger than or equal to the HOMO don ; 
 a Lowest Unoccupied Molecular Orbital energy level (LUMO AG-WG ) smaller than, equal to, or within 0.3 eV larger than the LUMO don ; and 
 a HOMO AS-WG -LUMO AS-WG  energy gap wider than a HOMO Don -LUMO Don  energy gap; 
   and wherein the at least one hole conducting material has a Highest Occupied Molecular Orbital energy level (HOMO HC ) smaller than, equal to, or within 0.2 eV larger than the HOMO don .   
     
     
         33 . The device of  claim 32 , wherein the HOMO AS-WG  is larger than the HOMO don , and the LUMO AS-WG  is smaller than the LUMO don . 
     
     
         34 . The device of  claim 32 , wherein the HOMO HC  is equal to the HOMO don . 
     
     
         35 . The device of  claim 32 , wherein the HOMO HC  is smaller than the HOMO don . 
     
     
         36 . The device of  claim 32 , wherein the HOMO AS-WG  is larger than the HOMO HC . 
     
     
         37 . The device of  claim 36 , wherein the HOMO AS-WG  is more than 0.2 eV larger than the HOMO don . 
     
     
         38 . The device of  claim 32 , wherein the at least one anode-side wide energy gap material comprises a material chosen from tetraaryl-benzindines, triaryl amines, 5,10-disubstituted anthracenes, oligothiophenes, 9,9-dialkyl-fluorene and oligomers thereof, 9,9-diaryl-fluorene and oligomers thereof, oligophenylenes, spiro-biphenyl, and derivatives thereof. 
     
     
         39 . The device of  claim 32 , wherein the at least one donor material comprises a material chosen from phthalocyanines, subphthalocyanines, naphthalocyanines, merocyanine dyes, boron-dipyrromethene (BODIPY) dyes, thiophenes, low band-gap polymers, polyacenes, diindenoperylene (DIP), squaraine (SQ) dyes, tetraphenyldibenzoperiflanthene (DBP), and derivatives thereof. 
     
     
         40 . The device of  claim 32 , wherein the at least one hole conducting material comprises a material chosen from phthalocyanines, subphthalocyanines, naphthalocyanines, merocyanine dyes, boron-dipyrromethene (BODIPY) dyes, thiophenes, low band-gap polymers, polyacenes, diindenoperylene (DIP), squaraine (SQ) dyes, tetraphenyldibenzoperiflanthene (DBP), and derivatives thereof. 
     
     
         41 . The device of  claim 32 , wherein the at least one donor material and the at least one hole conducting material comprise the same material. 
     
     
         42 . The device of  claim 32 , wherein the mixture comprises the at least one anode-side wide energy gap material and the at least one hole conducting material at a ratio ranging from 10:1 to 1:10 by volume. 
     
     
         43 . The device of  claim 42 , wherein the ratio of the at least one anode-side wide energy gap material to the at least one hole conducting material is in a range from 4:1 to 1:4 by volume. 
     
     
         44 . The device of  claim 43 , wherein the ratio of the at least one anode-side wide energy gap material to the at least one hole conducting material is in a range from 2:1 to 1:2 by volume. 
     
     
         45 . The device of  claim 32 , wherein the donor-acceptor heterojunction is chosen from a bulk heterojunction, planar heterojunction, mixed heterojunction, and planar-mixed heterojunction. 
     
     
         46 . The device of  claim 45 , wherein the donor acceptor-heterojunction is a planar-mixed heterojunction.