US2019267365A1PendingUtilityA1
Back-to-back stacked dies
Est. expiryAug 17, 2031(~5.1 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 90/754H10W 90/753H10W 90/732H10W 90/726H10W 90/724H10W 90/288H10W 90/271H10W 74/111H10W 74/00H10W 72/07352H10W 72/07338H10W 72/07336H10W 72/5525H10W 72/5524H10W 72/5522H10W 72/5475H10W 72/5449H10W 72/5445H10W 72/5363H10W 72/932H10W 72/884H10W 72/877H10W 72/534H10W 72/354H10W 72/352H10W 72/321H10W 72/252H10W 72/075H10W 72/073H10W 70/481H10W 44/501H10W 90/811H10W 74/129H10W 72/20H10W 70/464H10W 70/421H10W 40/778H10W 40/254H10W 40/22H10W 90/00Y10T29/49121H01L 23/49517H01L 2924/13064H01L 2224/92247H01L 25/16H01L 2224/291H01L 24/29H01L 2224/45144H01L 24/73H01L 25/0657H01L 2924/12032H01L 24/17H01L 2224/48091H01L 2224/45124H01L 2224/05553H01L 23/3732H01L 2924/01015H01L 2224/49111H01L 24/45H01L 2224/2919H01L 24/49H01L 24/32H01L 23/49541H01L 23/3114H01L 2224/32013H01L 23/49575H01L 24/16H01L 23/645H01L 2224/73253H01L 2224/83855H01L 2224/83801H01L 2224/45147H01L 25/18H01L 24/48H01L 23/367H01L 23/4334H01L 2224/45014
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Claims
Abstract
Embodiments disclosed herein provide for a circuit including first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier. The circuit also includes a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A circuit comprising:
a first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier; a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die; and a chip package surrounding the first die and the second die, wherein the carrier includes a plurality of pins, wherein the first die is mounted such that the active side is coupled to one or more of the plurality of pins.
2 . The circuit of claim 1 , comprising bond wires coupling the active side of the second die to a subset of the plurality of pins, wherein the subset of the plurality of pins are disposed at least partially outward from a footprint of the first die.
3 . The circuit of claim 2 , wherein a subset of the plurality of pins are disposed to be partially opposite the active side of the first die and partially outward from a footprint of the first die, wherein the subset is coupled to the active side of the first die and to one or more of the plurality of bond wires.
4 . The circuit of claim 1 , comprising a thermal plug thermally coupled to the backside of the first die and exposed at an outer surface of the chip package.
5 . A circuit comprising:
a first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier; a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die, wherein first die includes diamond on the backside.
6 . The circuit of claim 5 , wherein the second die is mounted to the first die using a non-electrically conductive epoxy.
7 . A circuit comprising:
a first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier; a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die; and a third die stacked on the backside of the first die, wherein the third die is stacked on the first die such that a backside of the third die is facing the backside of the first die and an active side of the third die faces away from the first die.
8 . The circuit of claim 7 , wherein the first die includes a high side device and a low side device, wherein the high side and low side devices have a lateral structure;
wherein the second die includes a controller for the high side device and the low side device; and wherein the third die includes a driver for the high side device and the low side device.
9 . An integrated circuit (IC) comprising:
a lead frame structure; a first die with an active side and a backside, the first die mounted to the lead frame structure such that the active side faces the lead frame structure and is coupled to the lead frame structure; a second die with an active side and a backside, the second die stacked on the first die such that the backside of the second die is facing the backside of the first die; and a plurality of bond wires coupled to the active side of the second die and to the lead frame structure.
10 . The IC of claim 9 , wherein the first die includes a metal layer on the backside, the packaged IC including one or more bond wires coupling the metal layer of the first die to the lead frame structure.
11 . The IC of claim 9 , comprising:
one of an electrically conductive epoxy or solder physically connecting and electrically coupling the backside of the second die to the backside of the first die.
12 . The IC of claim 9 , wherein the first die includes a power stage having a high side device and a low side device; and
wherein the second die includes a controller for the high side device and the low side device.
13 . The IC of claim 12 , comprising:
a third die stacked on the backside of the first die, wherein the third die is stacked on the first die such that a backside of the third die is facing the backside of the first die and an active side of the third die faces away from the first die, wherein the third die includes a driver for the high side device and the low side device.
14 . The IC of claim 9 , comprising:
a molding compound around the first die and the second die; and a thermal plug thermally coupled to the backside of the first die and exposed at an outer surface of the molding compound.
15 . The IC of claim 9 , wherein first die includes diamond on the backside.
16 . The IC of claim 9 , wherein the first die includes one of solder bumps, copper pillars, or solderable pads coupling the active side to the lead frame structure.
17 . A power conversion system comprising:
a power stage monolithic integrated circuit (IC) having a lateral structure including an active side and a backside, the active side of the power stage monolithic IC mounted to a carrier; a controller monolithic IC having a lateral structure including an active side and a backside, the controller monolithic IC stacked on the power stage monolithic IC, the backside of the controller monolithic IC mounted to the backside of the power stage monolithic IC, wherein the controller monolithic IC is configured to control the power stage IC; and a plurality of bond wires coupled to the active side of the controller monolithic IC and the carrier.
18 . The power conversion system of claim 17 , wherein the power stage monolithic IC includes a high side field effect transistor (FET) and a low side FET configured to implement a synchronous buck converter.
19 . The power conversion system of claim 17 , wherein the power stage monolithic IC includes a high side field effect transistor (FET) and a low side diode configured to implement a non-synchronous buck converter.
20 . The power conversion system of claim 17 , wherein the power stage monolithic IC includes a low side field effect transistor (FET) and a Schottky diode coupled in series with an output load.
21 . The power conversion system of claim 17 , comprising:
a driver monolithic IC having a lateral structure with an active side and a backside, the driver monolithic IC stacked on the backside of the power stage monolithic IC, the backside of the driver monolithic IC mounted to the backside of the power stage monolithic IC, the drive monolithic IC configured to drive the power stage monolithic IC.
22 . The power conversion system of claim 17 , comprising:
a chip package around the power stage monolithic IC, the controller monolithic IC, and the plurality of bond wires.
23 . The power conversion system of claim 17 , wherein the carrier includes a printed circuit board.
24 . An electronic device comprising:
one or more processing devices; one or more memory devices communicatively coupled to the one or more processing devices; and one or more power conversion systems coupled to the one or more processing devices and the one or more memory devices, the one or more power conversion systems having a controller die mounted on a power stage die such that a backside of the controller die is attached to a backside of the power stage die and configured to provide regulated power to the one or more processing devices and the one or more memory devices.
25 . The electronic device of claim 24 , wherein the electronic device comprises one of desktop, laptop, or tablet computer, a set top box, or a battery charger.Join the waitlist — get patent alerts
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