US2019267526A1PendingUtilityA1

Semiconductor Light Emitting Devices And Method Of Manufacturing The Same

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Assignee: SEMICON LIGHT CO LTDPriority: Feb 26, 2018Filed: Feb 26, 2019Published: Aug 29, 2019
Est. expiryFeb 26, 2038(~11.6 yrs left)· nominal 20-yr term from priority
H01L 33/60H01L 33/56H01L 33/40H01L 33/486H01L 33/465H01L 33/62H10H 20/8506H10H 20/862H10H 20/857H10H 20/854H10H 20/832H10H 20/856H10H 20/855H10H 20/0363H10H 20/0362H10H 20/853
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Claims

Abstract

Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.

Claims

exact text as granted — not AI-modified
What is claimed: 
     
         1 . A semiconductor light emitting device comprising:
 a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes;   an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and   an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip,   wherein the encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.   
     
     
         2 . The semiconductor light emitting device according to  claim 1 , wherein the external substrate includes a barrier arranged farther from the semiconductor light emitting device chip than the conductive layers are, and wherein the encapsulating member covers at least a portion of the upper face of the barrier. 
     
     
         3 . The semiconductor light emitting device according to  claim 2 , wherein the encapsulating member entirely covers the upper face of the barrier. 
     
     
         4 . The semiconductor light emitting device according to  claim 2 , wherein the barrier has a height equal to or less than a height of the conductive layers. wherein the barrier having an upper face in contact with the lower face of the encapsulating member. 
     
     
         5 . The semiconductor light emitting device according to  claim 4 , wherein the external substrate includes a reflective layer placed at a predefined distance from the barrier on the upper face of the external substrate. 
     
     
         6 . The semiconductor light emitting device according to  claim 5 , wherein one of lateral faces of the barrier located between the reflective layer and the barrier is not covered with the encapsulating member. 
     
     
         7 . The semiconductor light emitting device according to  claim 2 , wherein the barrier is made of a metallic substance comprising Au or Al. 
     
     
         8 . The semiconductor light emitting device according to  claim 2 , wherein the barrier has a closed loop form without a slit. 
     
     
         9 . The semiconductor light emitting device according to  claim 1 , wherein the semiconductor light emitting device chip emits light with a wavelength band ranging from 100 nm to 400 nm. 
     
     
         10 . The semiconductor light emitting device according to  claim 1 , wherein the encapsulating member is formed into at least one of a hemispherical convex lens, concave lens, flat-top lens, meniscus lens, conical lens or different geographical structure lens shape.

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