Semiconductor device and touch panel

Abstract

A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a transistor comprising a gate electrode, a gate insulating film, and a semiconductor film between the gate electrode and the gate insulating film;   an insulating film over the transistor;   a light-emitting element comprising a first electrode, an EL layer over the first electrode, and a second electrode over the EL layer; and   a touch sensor comprising the second electrode and a third electrode.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the semiconductor film is an oxide semiconductor film. 
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein the oxide semiconductor film is an In-M-Zn oxide, and   wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein the insulating film comprises hydrogen. 
     
     
         5 . An electronic device comprising:
 the semiconductor device according to  claim 1 ; and   a switch, a speaker, a display portion, or a housing.   
     
     
         6 . A semiconductor device comprising:
 a transistor comprising a gate electrode, a gate insulating film, and a semiconductor film between the gate electrode and the gate insulating film;   an insulating film over the transistor;   a liquid crystal element comprising a first electrode, a second electrode, and a liquid crystal layer; and   a touch sensor comprising the second electrode and a third electrode over the first electrode and the second electrode.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein the semiconductor film is an oxide semiconductor film. 
     
     
         8 . The semiconductor device according to  claim 7 ,
 wherein the oxide semiconductor film is an In-M-Zn oxide, and   wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.   
     
     
         9 . The semiconductor device according to  claim 6 , wherein the insulating film comprises hydrogen. 
     
     
         10 . An electronic device comprising:
 the semiconductor device according to  claim 6 ; and   a switch, a speaker, a display portion, or a housing.