Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first substrate; and   a thin film transistor, disposed on the first substrate, wherein the thin film transistor comprises:
 a gate; 
 a semiconductor pattern; 
 a first insulating layer, disposed between the gate and the semiconductor pattern; 
 a source and a drain, separated from each other and disposed corresponding to the semiconductor pattern; 
 wherein at least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer, the first copper oxynitride patterned layer covers the first copper patterned layer, and the first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. 
   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first copper patterned layer has a first top surface, a first bottom surface, and a first sidewall connected between the first bottom surface and the first top surface, and the first copper oxynitride patterned layer covers the first top surface and the first sidewall. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the at least one of the source and the drain further has a first molybdenum patterned layer, and the first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first molybdenum patterned layer. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising:
 a data line, electrically connected to the source of the thin film transistor, wherein the data line has a second copper patterned layer and a second copper oxynitride patterned layer, the second copper oxynitride patterned layer covers the second copper patterned layer, and the second copper patterned layer is disposed between the second copper oxynitride patterned layer and the first substrate.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the second copper patterned layer has a second top surface, a second bottom surface and a second sidewall connected between the second bottom surface and the second top surface, and the second copper oxynitride patterned layer covers the second top surface and the second sidewall. 
     
     
         6 . The semiconductor device according to  claim 4 , wherein the data line further has a second molybdenum patterned layer, the second copper patterned layer is disposed between the second copper oxynitride patterned layer and the second molybdenum patterned layer. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first copper oxynitride patterned layer directly contacts with the first copper patterned layer. 
     
     
         8 . The semiconductor device according to  claim 1 , further comprising:
 a silicon oxide layer, covering the first copper oxynitride patterned layer, and contacting with the first copper oxynitride patterned layer.   
     
     
         9 . The semiconductor device according to  claim 1 , further comprising:
 a pixel electrode, electrically connected to the drain.   
     
     
         10 . A manufacturing method of a semiconductor device, comprising:
 providing a first substrate;   forming a gate, a first insulating layer, and a semiconductor pattern on the first substrate, wherein the first insulating layer is disposed between the gate and the semiconductor pattern;   forming a copper material layer on the first substrate by using a physical vapor deposition;   introducing nitrogen to form a copper nitride material layer on the copper material layer;   patterning the copper material layer and the copper nitride material layer to form a first copper material layer and a first copper nitride material layer; and   introducing nitrous oxide to form a first copper oxynitride patterned layer and a first copper patterned layer, the first copper oxynitride patterned layer covering the first copper patterned layer, wherein the first copper patterned layer and the first copper oxynitride patterned layer comprise a source and a drain, and the source and the drain are separated from each other and disposed corresponding to the semiconductor pattern.   
     
     
         11 . The manufacturing method of the semiconductor device according to  claim 10 , further comprising:
 introducing silane after forming the first copper oxynitride patterned layer, the silane reacting with the nitrous oxide to form a silicon oxide layer, wherein the silicon oxide layer covers the source and the drain.