US2019348626A1PendingUtilityA1

Organic light emitting diode structure and method for manufacturing the same

Assignee: ZIXU OPTRONICS TECH SHANGHAI LIMITEDPriority: Aug 1, 2017Filed: Jul 24, 2019Published: Nov 14, 2019
Est. expiryAug 1, 2037(~11 yrs left)· nominal 20-yr term from priority
H01L 51/56H01L 51/5064H01L 51/508H01L 51/0018H01L 2251/303H10K 50/156H10K 71/233H10K 59/35H10K 71/221H10K 2102/00H10K 50/166H10K 71/00
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Claims

Abstract

The present disclosure provides an organic light emitting diode and method for manufacturing the same. The organic light emitting diode includes a substrate; an anode layer formed on a substrate, a hole transmission layer formed on the anode layer, a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer, at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer, an electron transmission auxiliary layer formed on the at least one illuminating block; an electron transmission layer formed on the electron transmission auxiliary layer and a cathode layer formed on the electron transmission layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An organic light emitting diode, comprising:
 a substrate;   an anode layer formed on the substrate;   a hole transmission layer formed on the anode layer;   a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer;   at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer;   an electron transmission layer formed on the at least one illuminating block; and   a cathode layer formed on the electron transmission layer.   
     
     
         2 . The organic light emitting diode according to  claim 1 , further comprising an electron transmission auxiliary layer formed between the at least one illuminating block and the electron transmission layer, and performed by a photolithography process, wherein the electron transmission auxiliary layer protects the surface of the at least one illuminating block, and the electron transmission auxiliary layer is electrically connected between the at least one illuminating block and the electron transmission layer. 
     
     
         3 . The organic light emitting diode according to  claim 2 , wherein the electron transmission auxiliary layer comprises an organic substance, a metal, a metal compound or a combination of at least two of the above. 
     
     
         4 . The organic light emitting diode according to  claim 3 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, the metal is lithium, sodium, potassium, rubidium or cesium, and the metal compound is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, barium fluoride, lithium carbonate, sodium carbonate, potassium carbonate, barium carbonate or barium carbonate. 
     
     
         5 . The organic light emitting diode according to  claim 1 , wherein the hole transmission auxiliary layer includes an organic substance and a metal oxide. 
     
     
         6 . The organic light emitting diode according to  claim 5 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, and the metal oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or gold oxide. 
     
     
         7 . The organic light emitting diode according to  claim 2 , wherein the hole transmission auxiliary layer includes an organic substance and a metal oxide. 
     
     
         8 . The organic light emitting diode according to  claim 7 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, and the metal oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or gold oxide. 
     
     
         9 . An organic light emitting diode, comprising:
 a substrate;   an anode layer formed on the substrate;   a hole transmission layer formed on the anode layer;   at least one illuminating block formed on the hole transmission layer;   an electron transmission auxiliary layer formed on the at least one illuminating block and performed by a photolithography process, wherein the electron transmission auxiliary layer protects a surface of the at least one illuminating block; and   an electron transmission layer formed on the electron transmission auxiliary layer, wherein the electron transmission layer is electrically connected between the electron transmission layer and the at least one illuminating block; and   a cathode layer formed on the electron transmission layer.   
     
     
         10 . The organic light emitting diode according to  claim 9 , further comprising a hole transmission auxiliary layer formed between the electron transmission layer and the at least one illuminating block, and performed by a photolithography process, wherein the hole transmission auxiliary layer protects the surface of the hole transmission layer, and the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer. 
     
     
         11 . The organic light emitting diode according to  claim 10 , wherein the hole transmission auxiliary layer includes an organic substance and a metal oxide. 
     
     
         12 . The organic light emitting diode according to  claim 11 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, and the metal oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or gold oxide. 
     
     
         13 . The organic light emitting diode according to  claim 9 , wherein the electron transmission auxiliary layer comprises an organic substance, a metal, a metal compound or a combination of at least two of the above. 
     
     
         14 . The organic light emitting diode according to  claim 13 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, the metal is lithium, sodium, potassium, rubidium or cesium, and the metal compound is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, barium fluoride, lithium carbonate, sodium carbonate, potassium carbonate, barium carbonate or barium carbonate. 
     
     
         15 . The organic light emitting diode according to  claim 10 , wherein the electron transmission auxiliary layer comprises an organic substance, a metal, a metal compound or a combination of at least two of the above. 
     
     
         16 . The organic light emitting diode according to  claim 15 , wherein the organic substance is a hydrocarbon and other organic substances containing carbon or hydrogen, the metal is lithium, sodium, potassium, rubidium or cesium, and the metal compound is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, barium fluoride, lithium carbonate, sodium carbonate, potassium carbonate, barium carbonate or barium carbonate.

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