US2019386123A1PendingUtilityA1
Methods of forming a bipolar transistor having a collector with a doping spike
Est. expiryApr 27, 2032(~5.8 yrs left)· nominal 20-yr term from priority
H10W 44/251H10W 44/248H10W 44/234H10W 44/231H10W 44/20H03F 3/195H03F 3/213H03F 2200/451H01L 2223/6683H01L 2223/6655H01L 29/7371H01L 29/365H01L 29/165H01L 29/0821H01L 29/66242H01L 23/66H01L 29/205H01L 29/737H01L 29/0826H01L 29/36H01L 29/7378H01L 2223/665H01L 29/73H01L 29/7325H01L 2223/6677H10D 62/824H10D 62/822H10D 62/605H10D 62/138H10D 62/137H10D 62/60H10D 10/821H10D 10/441H10D 10/80H10D 10/021H10D 10/00H10D 10/891
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Claims
Abstract
This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of forming a bipolar transistor comprising:
forming a sub-collector over a substrate; forming a first portion of a collector over the sub-collector; doping a second portion of the collector to form a doping spike; forming a third portion of the collector over the doping spike; and forming a base of the bipolar transistor over the third portion of the collector.Cited by (0)
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