US2020006715A1PendingUtilityA1

Organic light emitting device

51
Assignee: SAMSUNG DISPLAY CO LTDPriority: Jan 6, 2017Filed: Sep 12, 2019Published: Jan 2, 2020
Est. expiryJan 6, 2037(~10.5 yrs left)· nominal 20-yr term from priority
H01L 51/5092H01L 27/3244H01L 51/5096H01L 51/5088H01L 2227/323H01L 51/56H01L 51/5072H01L 2251/556H01L 51/0011H01L 51/5012H01L 27/3211H01L 51/5056H10K 71/40H10K 50/181H10K 50/171H10K 50/17H10K 71/00H10K 59/35C23C 14/12H10K 2102/361H10K 50/15H10K 50/12H10K 71/166H10K 50/16H10K 59/12H10K 50/11H10K 71/164H10K 71/18H10K 59/1201H10K 50/18
51
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Claims

Abstract

A method of forming a thin film includes preparing a mixture including a light emitting layer material that forms a light emitting layer and a material that forms a layer adjacent to the light emitting layer, and sequentially laminating the light emitting layer and the layer adjacent to the light emitting layer onto a substrate inside a chamber by heating the mixture to a process temperature of the light emitting layer material and a process temperature of the additional material. The light emitting layer material and the additional material have process temperatures that are different from each other. The light emitting layer material and the additional material are laminated onto the substrate sequentially from one of the light emitting layer material and the additional material having a lower process temperature to one of the light emitting layer material and the additional material having a higher process temperature.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A mixture for depositing a thin film, the mixture comprising:
 a light emitting layer material for forming a light emitting layer of an organic light emitting device; and   an additional material for forming at least one layer to be adjacent to the light emitting layer,   wherein the light emitting layer material and the additional material have different process temperatures at which a vapor pressure within a chamber comes to equal a process pressure.   
     
     
         2 . The mixture for depositing a thin film as claimed in  claim 1 , wherein the additional material includes at least one selected from a hole injection layer material, a hole transport layer material, an electron transport layer material, and an electron injection layer material. 
     
     
         3 . The mixture for depositing a thin film as claimed in  claim 1 , wherein the additional material further includes at least one selected from an electron blocking layer material and a hole blocking layer material. 
     
     
         4 . The mixture for depositing a thin film as claimed in  claim 2 , wherein the additional material includes the electron transport layer material, the light emitting layer material, and the hole transport layer material. 
     
     
         5 . The mixture for depositing a thin film as claimed in  claim 4 , wherein:
 the electron transport layer material has a first process temperature, the light emitting layer material has a second process temperature, and the hole transport layer material has a third process temperature, and   wherein the first process temperature differs from the second process temperature and the second process temperature differs from the third process temperature by about 20-100° C.   
     
     
         6 . The mixture for depositing a thin film as claimed in  claim 1 , wherein the process pressure is about 10 −4 -10 −9  Torr. 
     
     
         7 . The mixture for depositing a thin film as claimed in  claim 2 , wherein the hole injection layer material and the hole transport layer material have process temperatures that enable codeposition of the hole injection layer material and the hole transport layer material while manufacturing an organic light emitting device. 
     
     
         8 . The mixture for depositing a thin film as claimed in  claim 1 , wherein the light emitting layer material includes a host material and a dopant material. 
     
     
         9 . The mixture for depositing a thin film as claimed in  claim 8 , wherein a process temperature of the host material and a process temperature of the dopant material differ from each other by not more than about 10° C. 
     
     
         10 . The mixture for depositing a thin film as claimed in  claim 1 , wherein at least one of the light emitting layer material and the additional material is selected based on a wavelength band of light emitted from the light emitting layer. 
     
     
         11 . The mixture for depositing a thin film as claimed in  claim 1 , further comprising:
 a heat conductor that delivers heat to the light emitting layer material and the additional material; and   a binder that links the light emitting layer material with the additional material.   
     
     
         12 . The mixture for depositing a thin film as claimed in  claim 1 , wherein the mixture for depositing a thin film has a tabular shape, a pellet shape, or a granular shape.

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