Apparatus and method for treating substrate

Abstract

An apparatus for treating a substrate comprises a chamber having a processing space in which a process of treating the substrate is performed and a fluid supply unit that supplies a treating fluid into the chamber. The fluid supply unit comprises a supply line, at least one orifice provided in the supply line, and a first heater provided on the orifice or upstream of the orifice. The first heater heats the treating fluid passing through the orifice to a set temperature or more.

What is claimed is: 
     
         1 . An apparatus for treating a substrate, the apparatus comprising:
 a chamber having a processing space in which a process of treating the substrate is performed; and   a fluid supply unit configured to supply a treating fluid into the chamber,   wherein the fluid supply unit comprises:   a supply line;   at least one orifice provided in the supply line; and   a first heater provided on the orifice or upstream of the orifice, and   wherein the first heater heats the treating fluid passing through the orifice to a set temperature or more.   
     
     
         2 . The apparatus of  claim 1 , wherein the treating fluid is adiabatically expanded downstream of the orifice, and
 wherein the set temperature is a temperature that allows the temperature of the treating fluid adiabatically expanded after passing through the orifice to be maintained at a critical temperature or more.   
     
     
         3 . The apparatus of  claim 1 , wherein the supply line comprises:
 an orifice region in which the orifice is provided;   a front orifice region upstream of the orifice region; and   a rear orifice region downstream of the orifice region,   wherein the treating fluid forms at least one turning point in a temperature-pressure phase diagram while sequentially passing through the front orifice region, the orifice region, and the rear orifice region, and   wherein the turning point is formed at a temperature higher than a critical temperature of the treating fluid.   
     
     
         4 . The apparatus of  claim 1 , wherein the set temperature is a temperature that allows the treating fluid passing through the orifice to change into a gaseous or supercritical state to experience two-phase or less phase change. 
     
     
         5 . The apparatus of  claim 1 , further comprising:
 a second heater provided downstream of the orifice.   
     
     
         6 . The apparatus of  claim 1 , wherein the treating fluid is carbon dioxide. 
     
     
         7 . The apparatus of  claim 1 , wherein the process is a process of treating the substrate by using the treating fluid in a supercritical state. 
     
     
         8 . A method for treating a substrate, the method comprising:
 performing a process of treating the substrate by dispensing a supercritical fluid onto the substrate,   wherein a treating fluid flows through an orifice before dispensed onto the substrate, and   wherein the treating fluid is heated to a set temperature or more before passing through the orifice.   
     
     
         9 . The method of  claim 8 , wherein the temperature of the treating fluid is lowered downstream of the orifice, and
 wherein the set temperature is a temperature that allows the lowered temperature to be maintained at a critical temperature or more.   
     
     
         10 . The method of  claim 8 , wherein a supply line configured to supply the treating fluid comprises:
 an orifice region in which the orifice is provided;   a front orifice region upstream of the orifice region; and   a rear orifice region downstream of the orifice region,   wherein the treating fluid forms at least one turning point in a temperature-pressure phase diagram while sequentially passing through the front orifice region, the orifice region, and the rear orifice region, and   wherein the turning point is formed at a temperature higher than a critical temperature of the treating fluid.   
     
     
         11 . The method of  claim 8 , wherein the process is a process of drying the substrate. 
     
     
         12 . The method of  claim 8 , wherein the treating fluid is carbon dioxide.