Double-Sided Circuit Non-Oxide-Based Ceramic Substrate and Method for Manufacturing Same

Abstract

The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

1 . A double-sided circuit non-oxide-based ceramic substrate, comprising:
 a high heat-conductive non-oxide-based ceramic substrate that includes a through hole;   a holding layer that is formed on a wall surface of the through hole by oxide of silicon or alumina; and   an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal.   
     
     
         2 . The double-sided circuit non-oxide-based ceramic substrate according to  claim 1 , further comprising:
 electrodes that shield an end surface of the holding layer and an end surface of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.   
     
     
         3 . The double-sided circuit non-oxide-based ceramic substrate according to  claim 1 ,
 wherein heat conductivity of the ceramic substrate is 80 W/(m·K) or more.   
     
     
         4 . The double-sided circuit non-oxide-based ceramic substrate according to  claim 1 ,
 wherein the ceramic substrate is formed of at least one kind selected from a group consisting of aluminum nitride, silicon nitride, silicon carbide, and diamond.   
     
     
         5 . (canceled) 
     
     
         6 . (canceled) 
     
     
         7 . The double-sided circuit non-oxide-based ceramic substrate according to  claim 1 ,
 wherein the electro-conductive metal section is formed of an AG-Sn-based alloy.   
     
     
         8 . A double-sided circuit non-oxide-based ceramic substrate, comprising:
 a high heat-conductive non-oxide-based ceramic substrate that includes a through hole; and   a holding layer that is formed on a wall surface of the through hole by oxide of silicon or alumina.   
     
     
         9 . A method for manufacturing a double-sided circuit non-oxide-based ceramic substrate, comprising:
 a substrate baking step for baking a high heat-conductive non-oxide-based ceramic material that is formed into a sheet shape and manufacturing a high heat-conductive non-oxide-based ceramic substrate;   a piercing step for piercing a predetermined position of the ceramic substrate and forming a penetrated or non-penetrated through hole; and   a holding layer forming step for forming a holding layer at least on a wall surface of the through hole by oxide of silicon or alumina.   
     
     
         10 . The method for manufacturing a double-sided circuit non-oxide-based ceramic substrate according to  claim 9 , further comprising:
 a filling step for filling the through hole with an electro-conductive metal paste after the holding layer forming step, the electro-conductive metal paste not including an active metal, the holding layer being formed in the through hole;   an electro-conductive metal section forming step for baking the ceramic substrate to make the electro-conductive metal paste an electro-conductive metal section after the filling step; and   a polishing step for polishing one side surface and the other side surface of the ceramic substrate that includes the electro-conductive metal section, and exposing an end surface of the holding layer and an end surface of the electro-conductive metal section that is held inside the through hole by the holding layer to one side surface and the other side surface of the ceramic substrate respectively.   
     
     
         11 . The method for manufacturing a double-sided circuit non-oxide-based ceramic substrate according to  claim 10 , further comprising:
 an electrode shielding step for shielding an end surface of the holding layer and an end surface of the electro-conductive metal section having been exposed by electrodes, after the polishing step.