Mems isolation structures

Abstract

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

1 - 20 . (canceled) 
     
     
         21 . A microelectromechanical systems (MEMS) device comprising:
 a substrate having a first outer surface and a second outer surface opposite said first outer surface;   a channel formed in said substrate, said channel having a first opening defined by said first outer surface of said substrate, said channel being at least partially bounded by a first side wall and an opposite facing second side wall, said first side wall and said second side wall extending from said first outer surface toward said second outer surface; and   a first body of circuitry material having a first portion disposed in said channel and a second portion extending over said first outer surface of said substrate, said second portion of said first body of circuitry material extending from said first portion of said first body of circuitry material.   
     
     
         21 . The MEMS device of  claim 21 , wherein:
 said first portion of said first body of circuitry material is spaced apart from said first side wall of said channel, defining a first gap between said first portion of said first body of circuitry material and said first sidewall of said channel;   said first portion of said first body of circuitry material is spaced apart from said second side wall of said channel, defining a second gap between said first portion of said first body of circuitry material and said second sidewall of said channel; and   said second portion of said first body of circuitry material is spaced apart from said first outer surface of said substrate, defining a third gap between said second portion of said first body of circuitry material and said first outer surface of said substrate on a first side of said channel.   
     
     
         23 . The MEMS device of claim  22 , wherein:
 said second portion of said first body of circuitry material extends from said first portion of said first body of circuitry material in a first direction;   said first body of circuitry material further includes a third portion extending over said first outer surface of said substrate;   said third portion of said first body of said circuitry material extends from said first portion of said first body of circuitry material in a second direction opposite said first direction; and   said third portion of said first body of circuitry material is spaced apart from said first surface of said substrate, defining a fourth gap between said third portion of said first body of circuitry material and said first outer surface of said substrate on a second side of said channel opposite said first side of said channel.   
     
     
         24 . The MEMS device of  claim 23 , said first gap, said second gap, said third gap, and said fourth gap are all empty. 
     
     
         25 . The MEMS device of  claim 23 , wherein said first body of said circuitry material is electrically and mechanically isolated from said substrate. 
     
     
         26 . The MEMS device of  claim 21 , wherein said substrate is a semiconductor. 
     
     
         27 . The MEMS device of  claim 21 , wherein:
 said substrate is single-crystaline silicon; and   said first body of said circuitry material includes polysilicon.   
     
     
         28 . The MEMS device of  claim 21 , wherein said channel passes completely through said substrate such that said first outer surface of said substrate defines said first opening of said channel and said second outer surface of said substrate defines a second opening of said channel. 
     
     
         29 . The MEMS device of  claim 21 , further comprising a second body of circuitry material having a first portion disposed in said channel and a second portion extending over said first outer surface of said substrate, said second portion of said second body of circuitry material extending from said first portion of said second body of circuitry material. 
     
     
         30 . The MEMS device of  claim 29 , wherein:
 said second portion of said first body of circuitry material extends from said first portion of said first body of circuitry material in a first direction;   said first body of circuitry material further includes a third portion extending over said first outer surface of said substrate;   said third portion of said first body of said circuitry material extends from said first portion of said first body of circuitry material in a second direction opposite said first direction;   said second portion of said second body of circuitry material extends from said first portion of said second body of circuitry material in said first direction;   said second body of circuitry material further includes a third portion extending over said first outer surface of said substrate;   said third portion of said second body of circuitry material extends from said first portion of said second body of circuitry material in said second direction.   
     
     
         31 . The MEMS device of  claim 30 , wherein:
 said first portion of said first body of circuitry material extends from said second portion and said third portion of said first body of circuitry material in a direction perpendicular to said first direction and said second direction; and   said first portion of said second body of circuitry material extends from said second portion and said third portion of said second body of circuitry material in a direction perpendicular to said first direction and said second direction.   
     
     
         32 . The MEMS device of  claim 29 , wherein said channel passes completely through said substrate such that said first outer surface of said substrate defines a first opening of said channel and said second outer surface of said substrate defines a second opening of said channel. 
     
     
         33 . The MEMS device of  claim 29 , wherein
 said first body of circuitry material is mechanically and electrically isolated from said substrate and said second body of said circuitry material;   said second body of circuitry material is mechanically and electrically isolated from said substrate.   
     
     
         34 . A method of manufacturing a MEMS device, said method comprising:
 providing a substrate having a first outer surface and an opposite second outer surface;   forming a channel in said substrate through said first outer surface of said substrate, said channel being defined by a first interior surface of said substrate and a second interior surface of said substrate;   depositing a layer of insulating material on said first outer surface of said substrate, said first interior surface of said substrate, and said second interior surface of said substrate;   depositing a circuitry material over said layer of said insulation material in said channel and on said first outer surface of said substrate, thereby forming an unitary body of said circuitry material having a first portion disposed in said channel, a second portion over said first outer surface of said substrate on a first side of said channel, and a third portion over said first outer surface of said substrate on a second side of said channel; and   removing said insulation material from between said unitary body of said circuitry material and said substrate, thereby mechanically isolating said unitary body of said circuitry material from said substrate.   
     
     
         35 . The method of  claim 34 , further comprising removing a portion of said second outer surface of said substrate to open said channel through said second outer surface of said substrate. 
     
     
         36 . The method of  claim 35 , wherein said step of removing said portion of said second outer surface of said substrate is carried out before said step of removing said insulation material from between said unitary body of said circuitry material and said substrate. 
     
     
         37 . The method of  claim 34 , further comprising removing a portion of said circuitry material from said channel to divide said unitary body of said circuitry material into at least two discrete and mechanically separate bodies of said circuitry material simultaneously disposed in said channel. 
     
     
         38 . The method of  claim 37 , wherein said step of removing a portion of said circuitry material from said channel is carried out before said step of removing said insulation material from between said unitary body of said circuitry material and said substrate. 
     
     
         39 . The method of  claim 38 , further comprising removing a portion of said second outer surface of said substrate to open said channel through said second outer surface of said substrate. 
     
     
         40 . The method of  claim 39 , wherein said step of removing said portion of said second outer surface of said substrate is carried out before said step of removing said insulation material from between said unitary body of said circuitry material and said substrate.