Near-Ultraviolet Light-Emitting Semiconductor Light-Emitting Element And Group III Nitride Semiconductor Template Used Therefor

Abstract

Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on Al x Ga 1-x N (0<x≤1, x>y); and a monocrystalline Group III nitride semiconductor layer based on Al y Ga 1-y N (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

What is claimed: 
     
         1 . A Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template comprising:
 a growth substrate;   a nucleation layer based on Al x Ga 1-x N (0<x≤1, x>y); and   a monocrystalline Group III nitride semiconductor layer based on Al y Ga 1-y N (y>0).   
     
     
         2 . The Group III nitride semiconductor template for a near-ultraviolet light emitting semiconductor device according to  claim 1 , wherein the growth substrate comprises protruded and depressed portions for scattering light, and the Group III nitride semiconductor layer is adapted to cover the protruded and depressed portions. 
     
     
         3 . The Group III nitride semiconductor template for a near-ultraviolet light emitting semiconductor device according to  claim 2 , wherein the Group III nitride semiconductor layer comprises a first layer growing from the nucleation layer, a second layer covering the first layer and being coalesced together from above, and a third layer flat on top of the second layer. 
     
     
         4 . The Group III nitride semiconductor template for a near-ultraviolet light emitting semiconductor device according to  claim 1 , wherein Al composition value x in the nucleation layer is larger than Al composition value y in the Group III nitride semiconductor layer in order to protect the nucleation layer from desorption at a growth temperature of the Group III nitride semiconductor layer. 
     
     
         5 . The Group III nitride semiconductor template for a near-ultraviolet light emitting semiconductor device according to  claim 1 , wherein the nucleation layer is AlN. 
     
     
         6 - 10 . (canceled)