US2020062609A1PendingUtilityA1

Sub-100 nm oxidized transition metal tubular architectures

Assignee: AMERICAN UNIV IN CAIROPriority: Dec 3, 2015Filed: Dec 2, 2016Published: Feb 27, 2020
Est. expiryDec 3, 2035(~9.4 yrs left)· nominal 20-yr term from priority
C01P 2004/13C01P 2002/82C01P 2004/03C01P 2002/85C01G 23/047C25D 11/26C01B 19/007C01P 2002/72C25D 11/34C01P 2004/04C01G 1/02C01G 1/12Y02E60/36
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Claims

Abstract

An array of transition metal tubular architectures, where the transition metal tubular architectures are comprised of a transition metal oxide, sulfide, or selenide, and wherein transition metal tubular architectures are less than 100 nm in length. The transition metal tubular architectures can be at least partially crystalline. Within the array of transition metal tubular architectures, at least 80% of the transition metal tubular architectures can be less than 100 nm in length.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . An array of transition metal tubular architectures, wherein the transition metal tubular architectures are comprised of a transition metal oxide, sulfide, or selenide, and wherein transition metal tubular architectures are less than 100 nm in length. 
     
     
         2 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 80% of the transition metal tubular architectures are less than 100 nm in length. 
     
     
         3 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 85% of the transition metal tubular architectures are less than 100 nm in length. 
     
     
         4 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 90% of the transition metal tubular architectures are less than 100 nm in length. 
     
     
         5 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 95% of the transition metal tubular architectures are less than 100 nm in length. 
     
     
         6 . An array of transition metal tubular architectures according to  claim 1 , wherein 100% of the transition metal tubular architectures are less than 100 nm in length. 
     
     
         7 . An array of transition metal tubular architectures according to  claim 1 , wherein the transition metal tubular architectures are a transition metal oxide, sulfide, or selenide in the form of a hollow nanotube. 
     
     
         8 . An array of transition metal tubular architectures according to  claim 1 , wherein the transition metal tubular architectures are comprised of an oxide, sulfide, or selenide of at least one transition metal selected from the group consisting of Y, Ti, Zr, V, Ta, and Db. 
     
     
         9 . An array of transition metal tubular architectures according to  claim 8 , wherein the transition metal tubular architectures are at least partially crystalline. 
     
     
         10 . An array of transition metal tubular architectures according to  claim 1 , wherein the transition metal tubular architectures are comprised of an oxide of at least one transition metal selected from the group consisting of Y, Ti, Zr, and V. 
     
     
         11 . An array of transition metal tubular architectures according to  claim 10 , wherein the transition metal tubular architectures are at least partially crystalline. 
     
     
         12 . An array of transition metal tubular architectures according to  claim 1 , wherein the transition metal tubular architectures are comprised of titanium dioxide. 
     
     
         13 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 80% of the transition metal tubular architectures are titanium dioxide nanotubes. 
     
     
         14 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 85% of the transition metal tubular architectures are titanium dioxide nanotubes. 
     
     
         15 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 90% of the transition metal tubular architectures are titanium dioxide nanotubes. 
     
     
         16 . An array of transition metal tubular architectures according to  claim 1 , wherein at least 95% of the transition metal tubular architectures are titanium dioxide nanotubes. 
     
     
         17 . An array of transition metal tubular architectures according to  claim 1 , wherein the transition metal tubular architectures are at least partially crystalline. 
     
     
         18 . A method of making an array of transition metal tubular architectures according to  claim 1 , the method comprising oxidizing a transition metal, said transition metal immersed in a fluid medium that comprises an electrolyte, an acid, and a polymer. 
     
     
         19 . A method according to  claim 18 , wherein said oxidizing comprises oxidizing by galvanic anodization. 
     
     
         20 . A method according to  claim 19 , wherein said galvanic anodization takes place in an electrochemical cell that comprises at least two electrodes present in the fluid medium as part of the electrochemical cell, wherein said transition metal that is oxidized is in the form of an electrode. 
     
     
         21 . A method according to  claim 20 , wherein the fluid medium comprises an electrolyte, an acid, and a polymer having a controlled current passing therethrough. 
     
     
         22 . A method according to  claim 18 , wherein said electrolyte comprises NH 4 F. 
     
     
         23 . A method according to  claim 18 , wherein said acid comprises acetic acid. 
     
     
         24 . A method according to  claim 18 , wherein said polymer comprises polyvinylpyrrolidone. 
     
     
         25 . A method according to  claim 24 , wherein said polyvinylpyrrolidone has a molecular weight of from 20,000 g/mol to 1,000,000 g/mol. 
     
     
         26 . A method according to  claim 18 , wherein the temperature of the reaction environment in which the oxidizing takes place is from −50° C. to 30° C.

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