US2020066206A1PendingUtilityA1

Electro-optical device and electronic apparatus

Assignee: SEIKO EPSON CORPPriority: Mar 10, 2011Filed: Oct 30, 2019Published: Feb 27, 2020
Est. expiryMar 10, 2031(~4.5 yrs left)· nominal 20-yr term from priority
Inventors:Shin Fujita
G09G 3/3233G09G 2300/0809G09G 2300/043G09G 2330/06G09G 2300/0426G09G 2320/0209G09G 3/3283G09G 3/3266H01L 27/124H10D 86/481H10D 86/441H10D 86/60G09G 3/30H10K 59/1213H10K 59/131H10K 59/1216H10K 59/126
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Claims

Abstract

An electro-optical device includes a scanning line, a data line intersecting with each other, a pixel circuit which is provided corresponding to the intersection thereof, and a wire. The pixel circuit includes a light emitting element, one transistor which controls a current flowing to the light emitting element, and the other transistor of which conduction state is controlled according to a scanning signal which is supplied to the scanning line between a gate node of the one transistor and the data line. The wire is provided between the data line and the one transistor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electro-optical device comprising:
 a substrate;   a scanning line extending in a first direction;   a shield wire;   a data line extending in a second direction intersecting the first direction; and   a pixel circuit provided corresponding to an intersection of the scanning line and the data line, wherein   the pixel circuit includes:
 a light emitting element; 
 a first transistor that controls a current flowing through the light emitting element; 
 a first extended portion that extends in the first direction from the data line; 
 a lattice shaped portion of the shield wire; and 
 a second extended portion of the shield wire; 
   the shield wire is disposed between the data line and the first transistor in a thickness direction of the substrate that is perpendicular to the first direction and the second direction;   the lattice shaped portion has a third extended portion that extends in the first direction and a fourth extended portion that extends in the second direction;   the first transistor is surrounded by the third extended portion of the lattice shaped portion and the fourth extended portion of the lattice shaped portion in plan view; and   the second extended portion is extended in the first direction between the first extended portion and the first transistor in plan view.   
     
     
         2 . The electro-optical device according to  claim 1 ,
 wherein the lattice shaped portion and the second extended portion are arranged in the same layer.   
     
     
         3 . The electro-optical device according to  claim 1 ,
 wherein the shield wire has a constant potential.   
     
     
         4 . The electro-optical device according to  claim 1 ,
 the pixel circuit further comprising a second transistor of which conduction state is controlled according to a scanning signal which is supplied through the scanning line, wherein   the second transistor is surrounded by the lattice shaped portion.   
     
     
         5 . The electro-optical device according to  claim 1 ,
 the pixel circuit further comprising a capacitation, one end of the capacitation being electrically connected to a gate of the first transistor; wherein   the capacitation is surrounded by the lattice shaped portion.   
     
     
         6 . An electro apparatus comprising the electro-optical device according to  claim 1 .

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