Semiconductor device

Abstract

A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.

1 . A semiconductor device comprising:
 a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end;   a material film provided above the first and second regions; and   a first metal film provided on the material film in the second region or on the material film between the first region and the second region,   wherein a trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.   
     
     
         2 . The semiconductor device according to  claim 1  further comprising an element isolation portion provided on a surface of the substrate between the first region and the second region,
 wherein the trench is provided nearer to the first region than the element isolation portion. 
 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the first metal film is provided directly above the element isolation portion. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the material film has a crack that extends from the element isolation portion to the trench. 
     
     
         5 . The semiconductor device according to  claim 3 , wherein the material film has a crack that extends from the element isolation portion to the trench. 
     
     
         6 . The semiconductor device according to  claim 1  further comprising a crack stopper provided in the material film at a perimeter of the first region and extending toward the substrate from a surface of the material film. 
     
     
         7 . The semiconductor device according to  claim 2  further comprising a crack stopper provided in the material film at a perimeter of the first region and extending toward the substrate from a surface of the material film. 
     
     
         8 . The semiconductor device according to  claim 3  further comprising a crack stopper provided in the material film at a perimeter of the first region and extending toward the substrate from a surface of the material film. 
     
     
         9 . The semiconductor device according to  claim 4  further comprising a crack stopper provided in the material film at a perimeter of the first region and extending toward the substrate from a surface of the material film. 
     
     
         10 . The semiconductor device according to  claim 1 , wherein the trench is provided so as to surround an entire periphery of the first region. 
     
     
         11 . The semiconductor device according to  claim 1 , wherein the trench is provided at part of a periphery of the first region. 
     
     
         12 . The semiconductor device according to  claim 2  further comprising a metal compound layer provided between the substrate and the material film,
 wherein a crack is present between the material film and the metal compound layer from an end of the material film to the element isolation portion, the crack extending from the element isolation portion to the trench. 
 
     
     
         13 . The semiconductor device according to  claim 12 , wherein the material film is a stacked film of a plurality of silicon oxide films and a plurality of silicon nitride films alternately stacked or of the plurality of silicon oxide films and a plurality of second metal films alternately stacked, or is a single layer of an insulating film,
 wherein the metal compound layer is tungsten silicide (WSi) or tungsten nitride (WN).   
     
     
         14 . The semiconductor device according to  claim 12 , wherein the element isolation portion divides the metal compound layer. 
     
     
         15 . The semiconductor device according to  claim 1 , wherein a surface of the material film in the second region is located closer to the substrate than the surface of the material film under the first metal film, and
 the first metal film is not provided on the surface of the material film in the second region.   
     
     
         16 . The semiconductor device according to  claim 2 , wherein a surface of the material film in the second region is located closer to the substrate than the surface of the material film under the first metal film, and
 the first metal film is not provided on the surface of the material film in the second region.   
     
     
         17 . The semiconductor device according to  claim 3 , wherein a surface of the material film in the second region is located closer to the substrate than the surface of the material film under the first metal film, and
 the first metal film is not provided on the surface of the material film in the second region.   
     
     
         18 . The semiconductor device according to  claim 4 , wherein a surface of the material film in the second region is located closer to the substrate than the surface of the material film under the first metal film, and
 the first metal film is not provided on the surface of the material film in the second region.   
     
     
         19 . The semiconductor device according to  claim 1 , wherein the trench is not filled before installation of the semiconductor device. 
     
     
         20 . The semiconductor device according to  claim 1  further comprising a resin provided above the first and second regions, the resin having a contact with the first metal film and being embedded in the trench.