High performance chemical and bio sensors using metal oxide semiconductors

Abstract

Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.

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         17 . An electrochemical sensor, comprising:
 a gate electrode;   a dielectric layer over said gate electrode;   a channel layer over said dielectric layer; and   source and drain electrodes formed on said channel layer to provide a field effect transistor structure,   wherein said channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick, and   wherein said metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of said fluid.   
     
     
         18 . The electrochemical sensor according to  claim 17 , wherein said metal oxide semiconductor film is produced according to the method of  claim 1 . 
     
     
         19 . The electrochemical sensor according to  claim 17 , wherein said metal oxide semiconductor film is functionalized with at least one type of enzyme immobilized on a surface of said metal oxide semiconductor film. 
     
     
         20 . The electrochemical sensor according to  claim 19 , wherein said at least one type of enzyme immobilized on said surface of said metal oxide semiconductor film is a glucose oxidase such that said electrochemical sensor is a glucose sensor. 
     
     
         21 . The electrochemical sensor according to  claim 17 , wherein said metal oxide semiconductor film is functionalized with a salinized (3-Aminopropyl)triethoxysilane (APTES) such that said electrochemical sensor is a pH sensor. 
     
     
         22 . An electronic sensor, comprising:
 a gate electrode;   a dielectric layer over said gate electrode;   a metal-oxide semiconductor channel layer over said dielectric layer;   source and drain electrodes formed on said channel layer to provide a field effect transistor structure;   a silane functionalization layer formed on said metal-oxide semiconductor layer; and   a receptor layer formed on said silane functionalization layer,   wherein said receptor layer is open to receive molecules of a species to be detected.   
     
     
         23 . The electronic sensor of  claim 22 , wherein said silane functionalization layer is (3-Aminopropyl)triethoxysilane (APTES). 
     
     
         24 . The electronic sensor of  claim 22 , wherein said receptor layer comprises a sublayer of glutaraldehyde (GA) formed on said silane functionalization layer and a sublayer of 3-Aminophenylboronic acid monohydrate (APBA) formed on said sublayer of GA. 
     
     
         25 . A method of producing an electronic sensor, comprising:
 receiving a thin film field effect transistor having a metal-oxide channel layer and a silane functionalization layer on said metal-oxide channel layer; and   forming a receptor layer on said silane functionalization layer.   
     
     
         26 . The method of  claim 25 , wherein said silane functionalization layer is (3-Aminopropyl)triethoxysilane (APTES). 
     
     
         27 . The method of  claim 25 , wherein said forming said receptor layer comprises immersing said field effect transistor into a solution. 
     
     
         28 . The method of  claim 25 , wherein said forming said receptor layer comprises immersing said field effect transistor into a first solution for a first period of time and immersing said field effect transistor into a second solution for a second period of time. 
     
     
         29 . The method of  claim 28 , wherein said immersing said field effect transistor into said first solution for said first period of time forms a sublayer of GA on said silane functionalization layer, and
 wherein said immersing said field effect transistor into said second solution for said second period of time forms a sublayer of APBA on said GA sublayer.