US2020090867A1PendingUtilityA1

Measuring method for measuring concentration of donor element solid-solved in ceramic grains in ceramic dielectric layers

Assignee: TAIYO YUDEN KKPriority: Feb 16, 2017Filed: Nov 21, 2019Published: Mar 19, 2020
Est. expiryFeb 16, 2037(~10.5 yrs left)· nominal 20-yr term from priority
H01G 13/003B32B 2457/16H01G 4/1227C04B 2235/3258C04B 2235/78H01G 4/1209H01G 4/30C04B 2235/3251C04B 2235/3239B32B 2315/02C04B 2235/3206C04B 2235/3256H01G 4/012
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Claims

Abstract

A measuring method for measuring a concentration of a donor element which is solid-solved in ceramic grains of a plurality of ceramic dielectric layers, includes measuring (a current value at 10 V/μm when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/μm when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to a multilayer ceramic capacitor having a multilayer structure in which each of the plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A measuring method comprising:
 measuring a concentration of a donor element which is solid-solved in ceramic grains of a plurality of ceramic dielectric layers, by measuring (a current value at 10 V/μm when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/μm when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to a multilayer ceramic capacitor having a multilayer structure in which each of the plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked.   
     
     
         2 . The measuring method as claimed in  claim 1 , wherein an average grain diameter of the plurality of ceramic dielectric layers is 80 nm or more and 200 nm or less. 
     
     
         3 . The measuring method as claimed in  claim 1 , wherein the donor element is at least one of V, Mo, Nb, La, W and Ta. 
     
     
         4 . The measuring method as claimed in  claim 1 , wherein a thickness of the plurality of ceramic dielectric layers is 1 μm or less. 
     
     
         5 . The measuring method as claimed in  claim 1 , where a main component ceramic of the plurality of ceramic dielectric layers has a perovskite structure.

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