US2020091575A1PendingUtilityA1
Devices and methods related to high power diode switches
Est. expiryDec 31, 2033(~7.4 yrs left)· nominal 20-yr term from priority
H04B 1/38H04B 1/44H01P 1/213H04B 1/40
42
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Claims
Abstract
Devices and methods related to high power diode switches. In some embodiments, a radio-frequency (RF) switch circuit can include a plurality of first switchable paths implemented between a pole and a first throw, with each first switchable path including one or more PIN diodes. The RF switch circuit can further include a second switchable path implemented between the pole and a second throw, with the second switchable path including one or more PIN diodes. The pole can be an antenna port, and the first and second throws can be transmit (TX) and receive (RX) ports, respectively.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A radio-frequency (RF) switch circuit comprising:
a plurality of first switchable paths implemented between a pole and a first throw, each first switchable path including one or more PIN diodes; and a second switchable path implemented between the pole and a second throw, the second switchable path including one or more PIN diodes.Join the waitlist — get patent alerts
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