Wafer level sensing module, manufacturing method thereof and electronic device using the same

Abstract

A manufacturing method of wafer level sensing module includes: providing a chip substrate formed with a first receptor and a second receptor; disposing an emitter on the chip substrate; disposing a shielding assembly on the top surface of the chip substrate; and disposing a transparent shielding plate on the top surface of the chip substrate and in positional correspondence with the second receptor. The first lens is connected between the first shielding member and the second shielding member, and the emitter is arranged in a first space defined by the first shielding member, the first lens, the second shielding member, and the chip substrate. The second lens is connected between the second shielding member and the third shielding member, and the first receptor is arranged in a second space defined by the second shielding member, the second lens, the third shielding member, and the chip substrate.

What is claimed is: 
     
         1 . A manufacturing method of wafer level sensing module, comprising:
 providing a chip substrate formed with a first receptor and a second receptor, wherein the first receptor and the second receptor are exposed from a top surface of the chip substrate;   disposing an emitter on the chip substrate;   disposing a shielding assembly on the top surface of the chip substrate; and   disposing a transparent shielding plate on the top surface of the chip substrate and in positional correspondence with the second receptor.   
     
     
         2 . The manufacturing method according to  claim 1 , wherein the step of providing the chip substrate further includes forming a plurality of conductive vias or side connection wires for electrical conduction. 
     
     
         3 . The manufacturing method according to  claim 1 , wherein the step of providing the chip substrate further includes forming the first receptor and the second receptor together and embedding in the chip substrate. 
     
     
         4 . The manufacturing method according to  claim 1 , further comprising a step: disposing a plurality metal bumps and a redistribution circuit layer on a bottom surface of the chip substrate. 
     
     
         5 . The manufacturing method according to  claim 1 , further comprising a step: forming a coating layer on a surface of the transparent shielding plate for serving as a visible light filter or a three-primary color filter. 
     
     
         6 . The manufacturing method according to  claim 1 , wherein the shielding assembly is formed on the top surface of the chip substrate by injection molding or replica molding. 
     
     
         7 . The manufacturing method according to  claim 1 , wherein the shielding assembly includes a first shielding member and a second shielding member, which is disposed between the emitter and the first receptor. 
     
     
         8 . The manufacturing method according to  claim 7 , wherein the shielding assembly further includes a first lens, which is connected between the first shielding member and the second shielding member and corresponding in position to the emitter. 
     
     
         9 . The manufacturing method according to  claim 1 , wherein the shielding assembly includes a first shielding member, a second shielding member, a third shielding member, a first lens, and a second lens, the first lens corresponds in position to the emitter, and the second lens corresponds in position to the first receptor; wherein the first lens is connected between the first shielding member and the second shielding member, and the emitter is arranged in a first space defined by the first shielding member, the first lens, the second shielding member, and the chip substrate, wherein the second lens is connected between the second shielding member and the third shielding member, and the first receptor is arranged in a second space defined by the second shielding member, the second lens, the third shielding member, and the chip substrate. 
     
     
         10 . The manufacturing method according to  claim 9 , wherein the first shielding member, the second shielding member, and the third shielding member are formed by an infrared shielding material, and the first lens and the second lens are formed by a UV-cured material. 
     
     
         11 . A wafer level sensing module formed by the manufacturing method according to  claim 1 , wherein a position of the first receptor is lower than the position of the emitter. 
     
     
         12 . The wafer level sensing module according to  claim 11 , wherein the shielding assembly includes a first shielding member and a second shielding member, and the emitter is arranged in a first space defined by the first shielding member, the second shielding member, and the chip substrate. 
     
     
         13 . The wafer level sensing module according to  claim 12 , wherein the shielding assembly further includes a third shielding member, and the second shielding member, the chip substrate and the third shielding member define a second space arranging the first receptor. 
     
     
         14 . The wafer level sensing module according to  claim 13 , wherein the shielding assembly further includes:
 a first lens corresponding in position to the emitter; and   a second lens corresponding in position to the first receptor.   
     
     
         15 . An electronic device, comprising a wafer level sensing module forming according to  claim 11 , wherein the wafer level sensing module is disposed behind a display screen. 
     
     
         16 . The electronic device according to  claim 15 , wherein the display screen includes two holes, and one of the two holes is corresponding in position to the emitter and one of the two holes is corresponding in position to the first receptor and the second receptor. 
     
     
         17 . The electronic device according to  claim 16 , wherein the chip substrate has a plurality of conductive vias or side connection wires passing through thereof. 
     
     
         18 . The electronic device according to  claim 16 , wherein the shielding assembly includes a first shielding member, a second shielding member, and the emitter is arranged in a first space defined by the first shielding member, the second shielding member, and the chip substrate. 
     
     
         19 . The electronic device according to  claim 18 , wherein the shielding assembly further includes a first lens connected between the first shielding member and the second shielding member and corresponding in position to the emitter. 
     
     
         20 . The electronic device according to  claim 19 , wherein the shielding assembly further includes:
 a third shielding member; and   a second lens corresponding in position to the first receptor and connected between the second shielding member and the third shielding member;   wherein the first receptor is arranged in a second space defined by the second shielding member, the second lens, the third shielding member, and the chip substrate.