Fabric Substrate and Manufacturing Method Thereof

Abstract

According to the present invention, there is provided a fabric substrate for mounting a light emitting element. The fabric substrate includes a fabric layer including at least one fabric, a stress buffer layer that is disposed on the fabric layer and minimizes an occurrence of physical strain and stress caused by bending the fabric layer, and a flattening layer that is disposed on the stress buffer layer and provides a flat surface to allow a light emitting element to operate.

What is claimed is: 
     
         1 . A fabric substrate comprising:
 a fabric layer including at least one fabric;   a stress buffer layer that is disposed on the fabric layer and minimizes an occurrence of physical strain and stress caused by bending the fabric layer; and   a flattening layer that is disposed on the stress buffer layer and provides a flat surface to allow a light emitting element to operate.   
     
     
         2 . The fabric substrate of  claim 1 , wherein the stress buffer layer is formed of a material having elasticity and adhesiveness. 
     
     
         3 . The fabric substrate of  claim 1 , wherein the stress buffer layer is formed of a material having a Young's modulus of 500 MPa or less in order to obtain flexibility of the fabric substrate. 
     
     
         4 . The fabric substrate of  claim 1 , wherein the stress buffer layer is formed to have a thickness of 0.1 μm or more. 
     
     
         5 . The fabric substrate of  claim 1 , wherein the stress buffer layer is formed of a silicon-based material capable of being cured at room temperature. 
     
     
         6 . The fabric substrate of  claim 1 , wherein the flattening layer is formed of a material which has a surface roughness of several nanometers (nm) or less and an interface property suitable for forming a thin film. 
     
     
         7 . The fabric substrate of  claim 1 , wherein the flattening layer is formed of a material having a Young's modulus of 0.1 GPa or more. 
     
     
         8 . The fabric substrate of  claim 1 , wherein the flattening layer is formed to have a thickness of 30 μm or less. 
     
     
         9 . The fabric substrate of  claim 1 , wherein the flattening layer contains at least one of photocurable epoxy resin (SU-8), polyethylenenaphthalate (PEN), polyimide (PI), polyethylene terephthalate (PET), polyvinyl alcohol (PVA), acrylate, polyurethane, and polydimethylsiloxane. 
     
     
         10 . The fabric substrate of  claim 1 , wherein at least one of the stress buffer layer and the flattening layer is formed of a UV curable material. 
     
     
         11 . The fabric substrate of  claim 1 , wherein at least one of the stress buffer layer and the flattening layer includes multiple openings corresponding to a fabric-like pattern. 
     
     
         12 . A manufacturing method of a fabric substrate, comprising:
 disposing a sacrificial layer on a support substrate and disposing a flattening layer on the sacrificial layer;   disposing a stress buffer layer on the flattening layer, disposing a fabric layer on the stress buffer layer, and applying predetermined pressure in a direction of the fabric layer; and   generating a fabric substrate in which the flattening layer, the stress buffer layer, and the fabric layer are sequentially stacked, by removing the sacrificial layer disposed between the support substrate and the flattening layer.   
     
     
         13 . The manufacturing method of  claim 12 , further comprising:
 washing a contaminant on a surface of the support substrate.   
     
     
         14 . The manufacturing method of  claim 12 , wherein the sacrificial layer is formed of a material which is freely soluble in a solvent. 
     
     
         15 . The manufacturing method of  claim 12 , wherein, in the disposing of the sacrificial layer,
 the sacrificial layer is stacked by a predetermined coating process, and   the sacrificial layer is cured by being heated at a predetermined temperature for a predetermined time.   
     
     
         16 . The manufacturing method of  claim 12 , wherein, in the disposing of the flattening layer,
 the flattening layer is stacked by a predetermined coating process, and   the flattening layer is cured by being heated at a predetermined temperature for a predetermined time or by being irradiated with a UV ray having a predetermined wavelength for a predetermined time.   
     
     
         17 . The manufacturing method of  claim 12 , further comprising:
 hardening the stress buffer layer at room temperature for a predetermined time.   
     
     
         18 . The manufacturing method of  claim 12 , wherein, in the generating of the fabric substrate, the sacrificial layer is removed by a predetermined solvent. 
     
     
         19 . The manufacturing method of  claim 12 , further comprising:
 forming a metal pattern layer having a reversed pattern of a fabric-like pattern, between the support substrate and the sacrificial layer by a photolithography process.   
     
     
         20 . The manufacturing method of  claim 19 , further comprising:
 curing a portion of the flattening layer and the stress buffer layer by irradiation with UV rays in a direction of a lower surface of the support substrate; and   selectively etching a portion of the flattening layer and the stress buffer layer, in which UV curing is not caused, with a developer.