High-frequency electronic device and manufacturing method thereof

Abstract

A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

What is claimed is: 
     
         1 . A manufacturing method of high-frequency electronic device, comprising:
 providing a dielectric substrate, the dielectric substrate having a first side, a second side opposite to the first side, a first region, and a second region adjacent to the first region;   applying a laser on the first region of the dielectric substrate;   forming a first patterned metal layer on the first side of the dielectric substrate and corresponding to the first region; and   forming a second patterned metal layer on the first side or the second side of the dielectric substrate.   
     
     
         2 . The manufacturing method of  claim 1 , further comprising: processing a heat treatment to the first region of the dielectric substrate after the step of applying the laser. 
     
     
         3 . The manufacturing method of  claim 2 , wherein the heat treatment is processed at a temperature of 600-800° C. 
     
     
         4 . The manufacturing method of  claim 1 , wherein the laser is a continuous wave laser or a pulsed laser. 
     
     
         5 . The manufacturing method of  claim 1 , wherein the step of forming the first patterned metal layer is performed after the step of applying the laser on first region of the dielectric substrate. 
     
     
         6 . The manufacturing method of  claim 1 , wherein the step of applying the laser on first region of the dielectric substrate is performed after the step of forming the first patterned metal layer.