US2020294792A1PendingUtilityA1

Indium Nitride Material

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Assignee: US GOV SEC NAVYPriority: Jun 18, 2012Filed: Jun 1, 2020Published: Sep 17, 2020
Est. expiryJun 18, 2032(~5.9 yrs left)· nominal 20-yr term from priority
Inventors:Neeraj NepalCharles R. Eddy, Jr.Nadeemullah A. MahadikSyed B. QadriMichael J. Mehl
H10P 14/3602H10P 14/3216H10P 14/2926H10P 14/2921H10P 14/2905H10P 14/24H10P 14/3416H10P 14/20H10D 62/8503C30B 29/40C30B 29/38C30B 25/02C30B 25/205C30B 29/403H01L 21/0242H01L 21/02458H01L 21/02381H01L 29/2003H01L 21/02433H01L 21/0254H01L 21/0262H01L 21/02661
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Abstract

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Claims

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What is claimed is: 
     
         1 . A material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

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