Photosensitive resin composition, polyimide production method, and semiconductor device

Abstract

A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.

1 . A semiconductor device comprising copper wiring and an insulating layer provided on the copper wiring, wherein:
 after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer,   the insulating layer contains a polyimide, and   the polyimide comprises at least one selected from the group consisting of:
 (i) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; 
 (ii) polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and 
 (iii) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl. 
   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the area of void portion is 6% or less. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the area of void portion is 5% or less. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the area of void portion is 4% or less. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the area of void portion is 3% or less. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the area of void portion is 2% or less. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the area of void portion is 1% or less. 
     
     
         8 . The semiconductor device according to  claim 1 , wherein the area of void portion is vacuum. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the area of void portion is filled with a gas. 
     
     
         10 . The semiconductor device according to  claim 1 , wherein the insulating layer is an interlayer insulating film of the semiconductor device. 
     
     
         11 . A method for preparing a semiconductor device comprising:
 forming a copper wiring, and   providing an insulating layer on the copper wiring,   wherein:   the insulating layer contains a polyimide, the polyimide comprising at least one selected from the group consisting of:
 (i) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; 
 (ii) polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and 
 (iii) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl; and 
   after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer.   
     
     
         12 . The method according to  claim 11 , further comprising curing a polyimide precursor to form the insulating layer, the polyimide precursor comprising at least one selected from the group consisting of:
 (i) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether;   (ii) polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and   (iii) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.   
     
     
         13 . The method according to  claim 12 , further comprising:
 exposing a photosensitive polyimide precursor;   developing the photosensitive polyimide precursor after exposure to form a relief pattern; and   heat-treating the relief pattern to form a cured relief pattern as the insulating layer,   wherein the photosensitive polyimide precursor comprises at least one selected from the group consisting of:
 (i) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; 
 (ii) polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and 
 (iii) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.