Device for thermal conduction and electrical isolation

Abstract

The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AION), aluminum oxyhydronitride (AIHON), aluminum oxycarbonitride (AICON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AISi, C-AI, W—Cu, or Ti.

What is claimed: 
     
         1 . An insulated metal substrate (IMS) comprising:
 a substrate having a first side and a second side; and   a first dielectric layer on the first side of the substrate, wherein the dielectric layer comprises a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %.   
     
     
         2 . The IMS of  claim 1 , wherein the metal-based oxynitride comprises A x O y N z , wherein A stands for a metal, y is from 0.1 at % to 49.9 at %, z is from 0.1 at % to 49.9 at % and y+z is about 50 at %. 
     
     
         3 . The IMS of  claim 1 , wherein the metalloid-based oxynitride comprises B x O y N z , wherein B stands for a metalloid, y is from 0.1 at % to 49.9 at %, z is from 0.1 at % to 49.9 at % and y+z is about 50 at %. 
     
     
         4 . The IMS of  claim 1 , wherein the dielectric layer comprises one or more elements. 
     
     
         5 . The IMS of any one of preceding claims, wherein the first dielectric layer comprises a material selected from a group consisting of metal-based oxynitride, group Ill metals-based oxynitride, Group II metals-based oxynitride, Group IV metalloids-based oxynitrides, oxyhydronitrides, and oxycarbonitrides. 
     
     
         6 . The IMS of any one of the preceding claims, wherein the first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AlON), aluminum oxyhydronitride (AlHON), aluminum oxycarbonitride (AlCON), SiGeON, GaON, SiON, and GeON. 
     
     
         7 . The IMS of any one of the preceding claims, wherein the substrate comprises a material selected from a group consisting of metal, metal alloys, composite, and polymer. 
     
     
         8 . The IMS of any one of the preceding claims, wherein the substrate comprises one of Cu, Al, AlSi, C—Al, W—Cu, or Ti. 
     
     
         9 . The IMS of any one of the preceding claims, wherein the substrate is in a two-dimensional shape or a three-dimensional shape. 
     
     
         10 . The IMS of any one of the preceding claims, wherein the substrate comprises a finned structure. 
     
     
         11 . The IMS of any one of the preceding claims, wherein the substrate is pre-stressed. 
     
     
         12 . The IMS of any one of the preceding claims, wherein the first dielectric layer is disposed over a textured surface of the substrate. 
     
     
         13 . The IMS of any one of the preceding claims, wherein the first dielectric layer comprises a plurality of recesses. 
     
     
         14 . The IMS of any one of the preceding claims, further comprising a stress reduction metal layer between the substrate and the dielectric layer. 
     
     
         15 . The IMS of any one of the preceding claims, further comprising a first stress reduction metal layer over a first side of the substrate and a second stress reduction metal layer over a second side of the substrate. 
     
     
         16 . The IMS of any one of the preceding claims, further comprising a pre-metal-oxynitride adhesion layer over the first dielectric layer. 
     
     
         17 . The IMS of any one of the preceding claims, further comprising a second dielectric layer covering the sidewalls and/or the bottom of the substrate. 
     
     
         18 . The IMS of any one of the preceding claims, wherein the first dielectric layer comprises alternating first and second dielectric layers. 
     
     
         19 . The IMS of any one of the preceding claims, wherein the first dielectric layer comprises a metal-oxynitride composition gradient. 
     
     
         20 . The IMS of any one of the preceding claims, further comprising a second dielectric layer over the second side of the substrate. 
     
     
         21 . The IMS of any one of the preceding claims, wherein the first dielectric layer has a thickness ranging from 50 nm to 500 μm. 
     
     
         22 . The IMS of any one of the preceding claims, wherein the metal-based oxynitride comprises AlON, and the AlON comprises a random structure. 
     
     
         23 . The IMS of any one of the preceding claims, wherein the first dielectric layer has a thermal conductivity of at least 1 W/mk and the electrical standoff voltage greater than 50 v/μm. 
     
     
         24 . An insulated metal substrate (IMS) comprising:
 a substrate having a first side and a second side; and   an oxygen-doped AlN layer including oxygen from 0.0001 to 15 at % on the first side of the substrate.   
     
     
         25 . An insulated metal substrate (IMS) comprising:
 a substrate having a first side and a second side; and   a nitrogen-doped Al 2 O 3  layer including nitrogen from 0.0001 to 15 at % on the first side of the substrate.   
     
     
         26 . The IMS of any one of the preceding  claims 24 - 25 , wherein the substrate comprises a material selected from a group consisting of metal, metal alloys, composite, and polymer. 
     
     
         27 . The IMS of any one of the preceding  claims 24 - 26 , wherein the substrate is in a two-dimensional shape or a three-dimensional shape. 
     
     
         28 . The IMS of any one of the preceding  claims 24 - 27 , wherein the substrate comprises a finned structure. 
     
     
         29 . The IMS of any one of the preceding  claims 24 - 28 , wherein the substrate is pre-stressed. 
     
     
         30 . The IMS of any one of the preceding  claims 24 - 29 , wherein the first AlN or Al 2 O 3  layer is disposed over a textured surface of the substrate. 
     
     
         31 . The IMS of any one of the preceding  claims 24 - 30 , wherein the AlN or Al 2 O 3  layer comprises a plurality of recesses. 
     
     
         32 . The IMS of any one of the preceding  claims 24 - 31 , further comprising a metal layer between the substrate and the AlN layer. 
     
     
         33 . The IMS of any one of the preceding  claims 24 - 32 , wherein the AlN or Al 2 O 3  layer covers the side or the bottom of the substrate. 
     
     
         34 . The IMS of any one of the preceding  claims 24 - 33 , further comprising a second AlN or Al 2 O 3  layer over the second side of the substrate. 
     
     
         35 . The IMS of any one of the preceding  claims 24 - 34 , wherein the first AlN or Al 2 O 3  has a thickness ranging from 50 nm to 500 μm. 
     
     
         36 . The IMS of any one of the preceding  claims 24 - 35 , wherein the AlN or Al 2 O 3  layer has a thermal conductivity of at least 1 W/mk and the electrical standoff voltage greater than 50 v/μm. 
     
     
         37 . An IMS board comprising a subsequent metal layer over the IMS of any of the preceding claims. 
     
     
         38 . An IMS system comprising an electronic device or an acoustical device disposed over the IMS board of  claim 37 . 
     
     
         39 . The IMS system of  claim 38 , wherein the electronic device comprises one of light-emitting diode (LED), insulated-gate bipolar transistor (IGBT), and transistor. 
     
     
         40 . The IMS system of  claim 38 , wherein the acoustical device comprises a piezoelectric transducer.