US2020354850A1PendingUtilityA1

Method for manufacturing anodized aluminum or aluminum alloy member having excellent corrosion resistance and insulation characteristics, and surface-treated semiconductor device

37
Assignee: KOMICO LTDPriority: Dec 11, 2017Filed: Jul 17, 2018Published: Nov 12, 2020
Est. expiryDec 11, 2037(~11.4 yrs left)· nominal 20-yr term from priority
H10P 14/46H10P 14/42H10D 64/011H10P 95/00C25D 11/08C25D 11/10H10P 14/43H10P 14/3426H10P 14/69391H10D 64/01332
37
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

The present invention relates to a method of forming an anodic oxidation coat having excellent corrosion resistance and insulation properties on the surface of an aluminum or aluminum alloy member, and to an aluminum or aluminum alloy member having an anodic oxidation coat manufactured using the method. More particularly, the present invention relates to a method of forming an anodic oxidation coat having high hardness and excellent corrosion resistance and insulation properties without internal defects in an anodic oxidation coating layer, and to an internal member of a device for manufacturing a semiconductor or a display, the internal member being coated with an anodic oxidation coat manufactured using the method.

Claims

exact text as granted — not AI-modified
1 . A method of forming an oxidation coat of an aluminum-containing member of a device for manufacturing a semiconductor or a display, the method comprising:
 a) mixing a sulfuric acid, an oxalic acid, and a tartaric acid to manufacture an electrolytic solution; and   b) forming an anodic oxidation coat on a surface of an aluminum or aluminum alloy member using the electrolytic solution manufactured in step a).   
     
     
         2 . The method of  claim 1 , wherein a content weight ratio of the sulfuric acid, the oxalic acid, and the tartaric acid in the step a) is 9 to 11:2.5 to 3.5:0.3 to 0.7. 
     
     
         3 . The method of  claim 1 , wherein a concentration of the electrolytic solution is 1 to 10 wt %. 
     
     
         4 . The method of  claim 1 , wherein in the forming the anodic oxidation coat of step b), an applied current is 0.8 to 1.7 A/dm′ and a temperature of the electrolytic solution is 8 to 22° C. 
     
     
         5 . The method of  claim 1 , wherein the anodic oxidation coat has a thickness of 50 to 60 μm. 
     
     
         6 . An aluminum-containing member having an anodic oxidation coat of a device for manufacturing a semiconductor or a display, the anodic oxidation coat being formed on a surface thereof using the method of  claim 1 . 
     
     
         7 . An aluminum-containing member of a device for manufacturing a semiconductor or a display, the aluminum-containing member being coated with an anodic oxidation coat having a hardness of 370 to 425 Hv and a withstanding voltage of 1500 to 2000 V. 
     
     
         8 . The aluminum-containing member of  claim 7 , wherein the aluminum-containing member is coated with the anodic oxidation coat having a corrosion resistance of 120 minutes or more. 
     
     
         9 . An aluminum-containing member of a device for manufacturing a semiconductor or a display, the aluminum-containing member being coated with an anodic oxidation coat having a hardness of 370 to 425 Hv and a corrosion resistance of 120 minutes or more. 
     
     
         10 . An aluminum-containing member of a device for manufacturing a semiconductor or a display, the aluminum-containing member being coated with an anodic oxidation coat having a withstanding voltage of 1500 to 2000 V and a corrosion resistance of 120 minutes or more.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.