Method of Forming a Composite Conductive Film

Abstract

A method of fabricating a composite conductive film is provided. The method includes providing, as a matrix, a layer of photoresist material. The method further includes introducing a plurality of inorganic particles upon a surface of the layer of photoresist material. The method further includes, without patterning the layer of photoresist material, embedding at least some of the plurality of inorganic particles into the layer of photoresist material to form an inorganic mesh within the layer of photoresist material, thereby forming the composite conductive film. Embedding at least some of the plurality of inorganic particles into the layer of photoresist material results in the composite conductive film being patternable and substantially transparent to optical light.

What is claimed is: 
     
         1 . A method of fabricating a transparent and patternable composite conductive film, comprising:
 providing, as a matrix, a layer of photoresist material;   introducing a plurality of inorganic particles upon a surface of the layer of photoresist material; and   without patterning the layer of photoresist material, embedding at least some of the plurality of inorganic particles into the layer of photoresist material to form an inorganic mesh within the layer of photoresist material, thereby forming the composite conductive film,   wherein embedding at least some of the plurality of inorganic particles into the layer of photoresist material results in the composite conductive film being patternable and substantially transparent to optical light.   
     
     
         2 . The method of  claim 1 , further comprising, prior to embedding the inorganic particles into the layer of photoresist material, heating the layer of photoresist material from a first temperature to a second temperature, greater than the first temperature, wherein the layer of photoresist material is softer at the second temperature than at first temperature. 
     
     
         3 . The method of  claim 1 , wherein introducing the plurality of inorganic particles upon the surface of the layer of photoresist material comprises spraying a nanowire suspension onto the surface of the layer of photoresist material. 
     
     
         4 . The method of  claim 1 , wherein introducing the plurality of inorganic particles upon the surface of the layer of photoresist material comprises transferring said plurality of inorganic particles from a stamp in a stamp transfer process. 
     
     
         5 . The method of  claim 1 , wherein embedding the at least some of the plurality of inorganic particles into the layer of photoresist material to form the inorganic mesh within the layer of photoresist material comprises pressing a nanowire suspension into the surface of the layer of photoresist material. 
     
     
         6 . The method of  claim 1 , wherein the photoresist is photosensitive to light having an ultraviolet wavelength or a range of wavelengths in an ultraviolet range of wavelengths. 
     
     
         7 . The method of  claim 1 , further comprising:
 patterning the composite conductive film by:
 exposing at least a first region of the composite conductive film to light having a wavelength, wherein the photoresist material is cross-linked by exposure to light having the wavelength; 
 removing at least a second region of the composite conductive film using a chemical developer, wherein the second region of the composite conductive film has not been exposed to light having the wavelength and the photoresist material is soluble in the chemical developer when the photoresist material is in a noncross-linked state. 
   
     
     
         8 . The method of  claim 1 , further comprising:
 patterning the composite conductive film by:
 exposing at least a first region of the composite conductive film to light having a wavelength, wherein the photoresist material is characterized by cross-linking of polymers and said cross-linking of polymers is broken to form a noncross-linked state by exposure to light having the wavelength; 
 removing the first region of the composite conductive film using a chemical developer, wherein the photoresist material is soluble in the chemical developer when the photoresist material is in the noncross-linked state.