Light-emitting diode and manufacturing method thereof

Abstract

A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region, and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, including a first opening; and an electrode layer formed on the insulating layer, including a first pad and a first extension extending from the first pad; wherein the first extension contacts the transparent conductive layer through the first opening and covers the entire first opening.

What is claimed is: 
     
         1 . A light-emitting diode, comprising:
 a semiconductor stack, comprising a first semiconductor layer, an active region, and a second semiconductor layer;   a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer;   an insulating layer formed on the transparent conductive layer, comprising a first opening; and   an electrode layer formed on the insulating layer, comprising a first pad and a first extension extending from the first pad;   wherein the first extension contacts the transparent conductive layer through the first opening and covers the entire first opening.   
     
     
         2 . The light-emitting diode of  claim 1 , wherein the transparent conductive layer comprises a second opening exposing the second semiconductor layer. 
     
     
         3 . The light-emitting diode of  claim 2 , wherein the insulating layer further comprises a third opening and the first pad contacts the second semiconductor layer through the second opening and the third opening. 
     
     
         4 . The light-emitting diode of  claim 2 , further comprising a plurality of recesses formed in the semiconductor stack, wherein each of the recesses comprises a side wall and a bottom, and wherein the side wall exposes the second semiconductor layer and the active region and the bottom exposes the first semiconductor layer; and
 wherein the transparent conductive layer comprises a fourth opening exposing the plurality of recesses and the second semiconductor layer between two adjacent recesses of the plurality of recesses.   
     
     
         5 . The light-emitting diode of  claim 4 , wherein:
 the insulating layer further comprises a plurality of fifth openings exposing the bottoms of the plurality of recesses; and   the electrode layer further comprising a second pad and a second extension extending from the second pad, and the second extension contacts the bottom of each of the plurality of recesses through the plurality of fifth openings.   
     
     
         6 . The light-emitting diode of  claim 1 , wherein the first extension comprises a portion corresponding to the first opening, and the width of the portion is larger than the width of the first opening. 
     
     
         7 . The light-emitting diode of  claim 1 , further comprising a plurality of recesses formed in the semiconductor stack and the transparent conductive layer, wherein each of the recesses comprises a side wall and a bottom, and wherein the side wall is composed of side surfaces of the transparent conductive layer, the second semiconductor layer, the active region, and a portion of the first semiconductor layer and the bottom is composed of an upper surface of the first semiconductor layer; and
 wherein the first pad is formed on one of the plurality of recesses and the insulating layer covers the one of the plurality of recesses.   
     
     
         8 . The light-emitting diode of  claim 1 , wherein the insulating layer further comprises a third opening and the first pad contacts the transparent conductive layer through the third opening. 
     
     
         9 . A light-emitting diode, comprising:
 a semiconductor stack, comprising a first semiconductor layer, an active region, and a second semiconductor layer;   a recesses formed in the semiconductor stack, wherein the recess comprises a side wall and a bottom, and wherein the side wall exposes the second semiconductor layer and the active region and the bottom exposes a upper surface of the first semiconductor layer;   a transparent conductive layer formed on the semiconductor stack and electrically connecting the second semiconductor layer;   an insulating layer formed on the transparent conductive layer, comprising a first opening; and   an electrode layer formed on the insulating layer, comprising a pad and an extension extending from the pad;   wherein the extension covers the recess and electrically connects to the transparent conductive layer through the first opening and does not electrically connect to the first semiconductor layer through the recess.   
     
     
         10 . The light-emitting diode of  claim 9 , wherein the insulating layer further comprises an island covering the recess. 
     
     
         11 . The light-emitting diode of  claim 10 , wherein the first opening surrounds the island and the extension extends on the island. 
     
     
         12 . The light-emitting diode of  claim 10 , wherein the transparent conductive layer compresses a second opening at the location of the island. 
     
     
         13 . The light-emitting diode of  claim 12 , wherein the second opening has a width smaller than that of the islands, and the extension contacts the transparent conductive layer through the first opening. 
     
     
         14 . The light-emitting diode of  claim 12 , wherein the second opening has a width larger than that of the islands, and the extension contacts the second semiconductor layer through the first opening. 
     
     
         15 . A light-emitting diode, comprising:
 a semiconductor stack, comprising a first semiconductor layer, an active region, and a second semiconductor layer;   a transparent conductive layer formed on the semiconductor stack and electrically connecting to the second semiconductor layer;   an insulating layer formed on the transparent conductive layer, comprising a first opening and a plurality of islands in the first opening; and   an electrode layer formed on the insulating layer, comprising a pad and an extension extending from the pad;   wherein the extension electrically connects to the second semiconductor layer through the first opening and overlaps the plurality of islands.   
     
     
         16 . The light-emitting diode of  claim 15 , wherein the plurality of islands is separated with each other. 
     
     
         17 . The light-emitting diode of  claim 15 , wherein a part of the first opening is under the pad. 
     
     
         18 . The light-emitting diode of  claim 17 , wherein the transparent conductive layer comprises a second opening on the part of the first opening. 
     
     
         19 . The light-emitting diode of  claim 18 , wherein the pad contacts the second semiconductor layer through the part of the first opening and the second opening. 
     
     
         20 . The light-emitting diode of  claim 15 , wherein the extension extends along the first opening.