Optically clear photo-polymerization resists for additive manufacturing of radiopaque parts

Abstract

A resist blend for additive manufacturing includes a radiopaque pre-polymer compound, a photoinitiator, a polymerization inhibitor, and a base pre-polymer. The radiopaque pre-polymer compound includes at least one of the following elements: iodine, bromine, tin, lead, or bismuth. The resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable.

What is claimed is: 
     
         1 . A resist blend for additive manufacturing, the resist blend comprising:
 a radiopaque pre-polymer compound, wherein the compound is comprised of at least one element selected from a group of elements consisting of iodine, bromine, tin, lead, and bismuth;   a photoinitiator;   a polymerization inhibitor; and   a base pre-polymer,   wherein the resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable.   
     
     
         2 . The resist blend of  claim 1 , wherein a refractive index of the resist blend is about 1.52. 
     
     
         3 . The resist blend of  claim 1 , wherein the radiopaque pre-polymer compound is an iodinated pre-polymer. 
     
     
         4 . The resist blend of  claim 1 , wherein the base pre-polymer is present in a range of at least 40 to 85 wt % of the resist blend. 
     
     
         5 . The resist blend of  claim 1 , wherein the photoinitiator is present in a range of about 0.01 to about 0.10 wt % of the resist blend. 
     
     
         6 . The resist blend of  claim 1 , wherein the radiopaque pre-polymer compound is present in a range of greater than 0 to about 70 wt % of the resist blend. 
     
     
         7 . The resist blend of  claim 1 , wherein the inhibitor is present in a range of about 
     
     
         0 . 02 to about 0.08 wt % of the resist blend. 
     
     
         8 . The resist blend of  claim 1 , wherein the base pre-polymer is present in a range of about 30 to about 100 wt % of the resist blend. 
     
     
         9 . The resist blend of  claim 1 , further comprising an additive pre-polymer present in a range of greater than 0 to about 45 wt % of resist blend, wherein the concentration of additive pre-polymer results in a refractive index of 1.52 of the resist blend. 
     
     
         10 . The resist blend of  claim 1 , wherein a solvent is present in a range of greater than 0 to less than 10 wt % of the resist blend. 
     
     
         11 . The resist blend of  claim 1 , wherein the resist blend is radiopaque. 
     
     
         12 . The resist blend of  claim 1 , wherein the resist blend has a linear attenuation coefficient in a range of about 9 mm −1  to 21 mm −1 . 
     
     
         13 . A resist blend comprising:
 a radiopaque pre-polymer compound, wherein the compound is comprised of at least one element selected from a group of elements consisting of iodine, bromine, tin, lead, and bismuth,
 wherein the radiopaque pre-polymer compound has a structural formula as follows: 
   
       
         
           
           
               
               
           
         
       
       wherein each Z individually is one of the at least one element, and R is at least one functional group of the radiopaque pre-polymer compound;
 a photoinitiator; 
 a polymerization inhibitor; and 
 a base pre-polymer, 
 wherein the resist blend has a refractive index of 1.52±0.015. 
 
     
     
         14 . The resist blend of  claim 13 , wherein the radiopaque pre-polymer compound is an iodinated pre-polymer. 
     
     
         15 . The resist blend of  claim 13 , wherein the at least one functional group is selected from the group consisting of: an acrylic group, an epoxy group, a thiol-ene group, an aliphatic group, a polyethylene glycol group, an aromatic group, a dimethylsiloxane group, an acrylate, an olefin, an ester, an amide, an amine, an ether, a urea, a carbamate, a carbonate, and a sulfone. 
     
     
         16 . The resist blend of  claim 13 , wherein the radiopaque pre-polymer compound is present in a range of greater than 0 to about 70 wt % of the resist blend. 
     
     
         17 . A resist blend comprising:
 a radiopaque pre-polymer compound, wherein the compound is comprised of at least one element selected from a group of elements consisting of iodine, bromine, tin, lead, and bismuth,
 wherein the radiopaque pre-polymer compound has a structural formula as follows: 
   
       
         
           
           
               
               
           
         
       
       wherein each Z individually is one of the at least one element, and R is at least one functional group of the radiopaque pre-polymer compound;
 a photoinitiator; 
 a polymerization inhibitor; and 
 a base pre-polymer, 
 wherein the resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable. 
 
     
     
         18 . The resist blend of  claim 17 , wherein the radiopaque pre-polymer compound is an iodinated pre-polymer. 
     
     
         19 . The resist blend of  claim 17 , wherein the at least one functional group is selected from the group consisting of: an acrylic group, an epoxy group, a thiol-ene group, an aliphatic group, a polyethylene glycol group, an aromatic group, a dimethylsiloxane group, an acrylate, an olefin, an ester, an amide, an amine, an ether, a urea, a carbamate, a carbonate, and a sulfone. 
     
     
         20 . The resist blend of  claim 17 , wherein the radiopaque pre-polymer compound is present in a range of greater than 0 to about 70 wt % of the resist blend.