US2020399124A1PendingUtilityA1
Substrate-free 2d tellurene
Est. expiryJun 19, 2037(~10.9 yrs left)· nominal 20-yr term from priority
C01P 2004/20C30B 29/02C30B 7/10C01B 19/02C30B 29/60C01P 2002/60C30B 7/105C01P 2002/74C30B 30/00
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Claims
Abstract
The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).
Claims
exact text as granted — not AI-modified1 . A composition comprising substrate-free 2D tellurene crystals.
2 . The composition of claim 1 , wherein the 2D tellurene crystals have a lateral length from 0.1-500 μm.
3 . The composition of claim 2 , wherein the 2D tellurene crystals have a lateral length from 0.1-100 μm.
4 . The composition of claim 1 , wherein the 2D tellurene crystals have a thickness from 0.5-250 nm.
5 . The composition of claim 4 , wherein the 2D tellurene crystals have a thickness from 0.5-100 nm.
6 . The composition of claim 1 , wherein the 2D tellurene crystals comprises 2D tellurene single crystals.
7 . The composition of claim 1 , wherein the 2D tellurene crystals comprises mono layer 2D tellurene crystals.
8 . The composition of claim 1 , wherein the 2D tellurene crystals comprises two or more layers of 2D tellurene crystals.
9 . The composition of claim 1 , wherein the 2D tellurene crystals are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).
10 . A method of preparing substrate-free 2D tellurene crystals, wherein the method comprises reacting sodium tellurite (Na 2 TeO 3 ) and hydrazine (N 2 H 4 ) in an alkaline condition (pH >7) with the presence of polyvinylpyrrolidone (PVP).
11 . The method of claim 10 , wherein the mole ratio of Na 2 TeO 3 /PVP is 10-100:1.
12 . The method of claim 10 , wherein the reaction temperature is 120-250° C.
13 . The method of claim 10 , wherein the reaction time is at least 1 hours.
14 . The method of claim 11 , wherein acetone is added to the as-synthesized 2D tellurene crystals to provide 2D tellurene crystals with a thickness of 0.5-10 nm.
15 . The method of claim 11 , wherein NaOH is added to the as-synthesized 2D tellurene crystals to provide 2D tellurene crystals with a thickness of 0.5-10 nm.Join the waitlist — get patent alerts
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