Treatment solution and treatment method

Abstract

According to one embodiment, a treatment solution is provided. The treatment solution is used for treating a byproduct stemming from a process of depositing a silicon-containing material on a member using a gas which includes silicon and halogen. The treatment solution includes at least one of an inorganic base or an organic base and being basic.

What is claimed: 
     
         1 . A treatment solution for treating a byproduct stemming from a process of depositing a silicon-containing material on a member using a gas which includes silicon and halogen, the treatment solution comprising at least one of an inorganic base or an organic base and being basic. 
     
     
         2 . The treatment solution according to  claim 1  comprising the inorganic base, wherein the inorganic base is at least one selected from the group consisting of sodium hydroxide (NaOH), potassium hydroxide (KOH), sodium carbonate (Na 2 CO 3 ), calcium hydroxide (Ca(OH) 2 ), lithium hydroxide (LiOH), sodium hydrogencarbonate (NaHCO 3 ), and ammonium hydroxide (NH 4 OH). 
     
     
         3 . The treatment solution according to  claim 1  comprising the inorganic base, wherein the inorganic base is at least one selected from the group consisting of potassium hydroxide (KOH), sodium carbonate (Na 2 CO 3 ), lithium hydroxide (LiOH), sodium hydrogencarbonate (NaHCO 3 ), and ammonium hydroxide (NH 4 OH). 
     
     
         4 . The treatment solution according to  claim 1  comprising the organic base, wherein the organic base comprises at least one selected from the group consisting of alkylammonium hydroxides, an organometallic compound, a metal alkoxide, an amine, and a heterocyclic amine. 
     
     
         5 . The treatment solution according to  claim 1  comprising the organic base, wherein the organic base is at least one selected from the group consisting of sodium phenoxide (C 6 H 5 ONa), 2-hydroxyethyltrimethylammonium hydroxide (choline hydroxide), and tetramethylammonium hydroxide (TMAH). 
     
     
         6 . The treatment solution according to  claim 1 , wherein the treatment solution has a pH value of 8 to 14. 
     
     
         7 . The treatment solution according to  claim 1 , wherein the treatment solution further comprises a surfactant. 
     
     
         8 . The treatment solution according to  claim 7 , wherein the surfactant is a cationic surfactant. 
     
     
         9 . The treatment solution according to  claim 1 , wherein the treatment solution further comprises a pH buffer. 
     
     
         10 . The treatment solution according to  claim 1 , wherein the halogen of the gas comprises chlorine. 
     
     
         11 . The treatment solution according to  claim 1 , wherein the byproduct comprises a compound having at least one of a siloxane bond or a silanol group. 
     
     
         12 . A treatment method using the treatment solution according to  claim 1 , the method comprising making the byproduct come into contact with the treatment solution. 
     
     
         13 . The treatment method according to  claim 12 , comprising, after making the byproduct come into contact with the treatment solution, performing an ultrasonic treatment on a resulting mixture. 
     
     
         14 . A treatment method using the treatment solution according to  claim 1 , the method comprising:
 making the byproduct come into contact with water to obtain a mixture; and   making the mixture come into contact with the treatment solution.   
     
     
         15 . The method according to  claim 14 , wherein the mixture obtained by making the byproduct come into contact with water comprises a compound having at least one of a siloxane bond or a silanol group.