Semiconductor device and fabrication method for the same

Abstract

The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a gate electrode formed on an active region of a semiconductor substrate;   a first silicon-germanium layer formed in a first depression provided in a portion of the active region;   the first silicon-germanium layer comprising silicon, germanium, or some combination thereof;   a gate interconnect formed at a position opposite to the gate electrode with respect to the first depression;   a first contact plug comprised of tungsten;   a first sidewall formed on the side face of the gate interconnect closer to the first depression;   a second sidewall formed on the other side face of the gate interconnect;   wherein in a cross-sectional configuration, the first sidewall is lower in height than the second sidewall, and the gate interconnect is formed at least partly on the active region.