US2021057454A1PendingUtilityA1
Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
Est. expiryMar 1, 2037(~10.6 yrs left)· nominal 20-yr term from priority
H10W 20/43H10D 62/8503H10D 30/475H10D 30/015H10D 99/00H10D 86/471H10D 86/423H10D 86/60H10D 86/021H10D 84/82H10D 84/08H10D 84/05H10D 84/01H10D 62/824H10D 62/115H10D 62/80H10D 30/6755H10D 30/6739H10D 30/4755H10D 87/00H01L 21/8252H01L 51/0508H01L 29/205H01L 27/3248H01L 27/1225H01L 29/7787H01L 27/085H01L 27/1259H01L 29/66969H01L 29/4908H01L 23/528H01L 29/7869H01L 27/1207H01L 29/0649H01L 27/1251H01L 29/24H01L 27/0605H01L 29/2003H01L 21/8258H10K 59/123H10K 10/46
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Claims
Abstract
A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.
Claims
exact text as granted — not AI-modified1 - 7 . (canceled)
8 . A monolithically integrated circuit comprising:
a semiconducting wafer comprising an alloy of two or more of indium, gallium, aluminum, phosphorus, nitrogen, and arsenic; a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer; a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer, the dissimilar semiconductor device being electrically isolated from the first region of the semiconducting wafer; and an electrically conducting interconnect layer connecting the metal oxide thin film semiconductor device to the dissimilar semiconductor device.
9 . (canceled)
10 . The monolithically integrated circuit of claim 8 wherein the dissimilar semiconductor device is a compound semiconductor transistor.
11 . The monolithically integrated circuit of claim 8 wherein the metal oxide thin film semiconductor device includes a metal oxide thin film semiconductor device gate and a metal oxide thin film semiconductor device dielectric layer and the dissimilar semiconductor device includes a dissimilar semiconductor device gate and a dissimilar semiconductor device passivation layer, at least one of the metal oxide thin film semiconductor device gate and metal oxide thin film semiconductor device dielectric layer being formed from a same material and concurrently with the dissimilar semiconductor device gate and the dissimilar semiconductor device passivation layer, respectively.
12 .- 20 . (canceled)Join the waitlist — get patent alerts
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