Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom

Abstract

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

What is claimed is: 
     
         1 . A growth inhibitor for forming a thin film comprising:
 a compound represented by Chemical Formula 1 below:
   A n B m X o   [Chemical Formula 1]
 
   wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.   
     
     
         2 . The growth inhibitor for forming a thin film of  claim 1 , wherein in Chemical Formula 1, the X is Cl (chlorine). 
     
     
         3 . The growth inhibitor for forming a thin film of  claim 1 , wherein in Chemical Formula 1, the o is an integer of 1 to 5. 
     
     
         4 . The growth inhibitor for forming a thin film of  claim 1 , wherein the compound represented by Chemical Formula 1 is a branched, cyclic or aromatic compound. 
     
     
         5 . The growth inhibitor for forming a thin film of  claim 1 , wherein the compound represented by Chemical Formula 1 is used in an atomic layer deposition (ALD) process. 
     
     
         6 . The growth inhibitor for forming a thin film of claim  1 , wherein the compound represented by Chemical Formula 1 is a liquid at room temperature (22° C.), and has a density of 0.8 to 1.5 g/cm 3 , a vapor pressure (20° C.) of 1 to 300 mmHg, and solubility in water (25° C.) of 200 mg/L or less. 
     
     
         7 . A method for forming a thin film comprising:
 injecting a growth inhibitor for forming a thin film into an atomic layer deposition (ALD) chamber and adsorbing the growth inhibitor for forming a thin film on a surface of a loaded substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below:
   A n B m X o   [Chemical Formula 1]
 
   wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.   
     
     
         8 . The method for forming a thin film of  claim 7 , further comprising:
 i) vaporizing a growth inhibitor for forming a thin film and adsorbing the growth inhibitor on a surface of a substrate loaded in an atomic layer deposition (ALD) chamber;   ii) primary purging of an inside of the ALD chamber with a purge gas;   iii) vaporizing a thin film precursor compound and adsorbing the thin film precursor compound on the surface of the substrate loaded in the ALD chamber;   iv) secondary purging of the inside of the ALD chamber with a purge gas;   v) supplying a reaction gas into the ALD chamber; and   vi) tertiary purging of the inside of the ALD chamber with a purge gas.   
     
     
         9 . The method for forming a thin film of  claim 8 , wherein the growth inhibitor for forming a thin film and the thin film precursor compound are transferred into the ALD chamber by a vapor flow control (VFC) method, a delivery liquid injection (DLI) method or a liquid delivery system (LDS) method. 
     
     
         10 . The method for forming a thin film of  claim 8 , wherein a ratio of the feeding amount (mg/cycle) between the growth inhibitor for forming a thin film and the precursor compound in the ALD chamber is 1:1.5 to 1:20. 
     
     
         11 . The method for forming a thin film of  claim 8 , wherein a reduction rate of a thin film growth rate (Å/cycle) per cycle calculated by the following Equation 1 is −5% or less.
   Reduction rate of thin film growth rate per cycle (%)=[(thin film growth rate per cycle when growth inhibitor for forming thin film is used−thin film growth rate per cycle when growth inhibitor for forming thin film is not used)/thin film growth rate per cycle when growth inhibitor for forming thin film is not used]×100  [Equation 1]
 
 
     
     
         12 . The method for forming a thin film of  claim 8 , wherein a residual halogen intensity (c/s) in the thin film formed after 200 cycles, which is measured based on SIMS, is 10,000 or less. 
     
     
         13 . The method for forming a thin film of  claim 8 , wherein the reaction gas is a reducing agent, a nitriding agent, or an oxidizing agent. 
     
     
         14 . A semiconductor substrate prepared from a method for forming a thin film of  claim 7 . 
     
     
         15 . The semiconductor substrate of  claim 14 , wherein the prepared thin film has a thickness of 20 nm or less, a specific resistance value of 0.1 to 400 μΩ·cm, a halogen content of 10,000 ppm or less, and a step coverage of 90% or more.