Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.

1 . A semiconductor device comprising:
 a barrier metal layer provided on a surface of an insulating layer; and   a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer, wherein   the second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a bond energy between the impurity and the metal is higher than a bond energy between the metal and the fluorine. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the impurity includes at least one of an aluminum atom (Al), a zirconium atom (Zr), a hafnium atom (Hf), a silicon atom (Si), a boron atom (B), a titanium atom (Ti), an oxygen atom (O), an yttrium atom (Y) and a carbon atom (C). 
     
     
         4 . The semiconductor device of  claim 1 , wherein a concentration of the impurity is uniform in the second metal layer. 
     
     
         5 . The semiconductor device of  claim 1 , wherein an impurity concentration in the second metal layer is 1×10 19  to 1×10 21  atoms/cm 3 . 
     
     
         6 . The semiconductor device of  claim 1 , wherein the second metal layer includes at least one high concentration layer in which a concentration of the impurity is locally high. 
     
     
         7 . A manufacturing method of a semiconductor device, comprising:
 forming a barrier metal layer on a surface of an insulating layer;   forming a first metal layer on a surface of the barrier metal layer; and   forming, on a surface of the first metal layer, a second metal layer including an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.   
     
     
         8 . The manufacturing method of  claim 7 , wherein a bond energy between the impurity and the metal is higher than a bond energy between the metal and the fluorine. 
     
     
         9 . The manufacturing method of  claim 7 , wherein the impurity includes at least one of an aluminum atom (Al), a zirconium atom (Zr), a hafnium atom (Hf), a silicon atom (Si), a boron atom (B), a titanium atom (Ti), an oxygen atom (O), an yttrium atom (Y) and a carbon atom (C). 
     
     
         10 . The manufacturing method of  claim 7 , wherein a concentration of the impurity is uniform in the second metal layer. 
     
     
         11 . The manufacturing method of  claim 7 , wherein an impurity concentration in the second metal layer is 1×10 19  to 1×10 21  atoms/cm 3 . 
     
     
         12 . The manufacturing method of  claim 7 , comprising forming, in the second metal layer, at least one high concentration layer in which a concentration of the impurity is locally high.