Hydride enhanced growth rates in hydride vapor phase epitaxy

Abstract

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

What is claimed is: 
     
         1 . A reactor capable of the deposition of at least one layer of a semiconductor device by using hydride vapor phase epitaxy (HVPE), wherein the reactor is capable of producing the at least one layer of a semiconductor device at a rate of greater than 300 μm/h at a pressure of about 1 atm. 
     
     
         2 . The reactor of  claim 1  comprising a group V hydride injector inlet, a group V hydride outlet and source boats. 
     
     
         3 . The reactor of  claim 2  further comprising a high temperature region and a low temperature region wherein the high temperature region contains the source boats and wherein the low temperature region contains the group V hydride injector outlet. 
     
     
         4 . The reactor of  claim 3  wherein the high temperature region is at a temperature of up to about 750° C., and wherein the low temperature region is at a temperature of below about 650° C. 
     
     
         5 . The reactor of  claim 3  wherein the low temperature region is where the at least one layer of a semiconductor device is deposited. 
     
     
         6 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device comprises III-V semiconductors. 
     
     
         7 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device is selected from the group consisting of GaAs and GaInP. 
     
     
         8 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device is a single-junction GaAs solar cell having an efficiency of about 25% or greater. 
     
     
         9 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device has an open circuit voltage (V OC ) of greater than 1.04 V. 
     
     
         10 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device has a fill factor of at least 80%. 
     
     
         11 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device comprises an anti-reflective coating. 
     
     
         12 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than 0.4V. 
     
     
         13 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than about 0.33V. 
     
     
         14 . The reactor of  claim 1  wherein the at least one layer of a semiconductor device has a EL2 trap density of less than about 0.4×10 15  cm −3  at growth rates up to about 320 μm/h.