Ultra-low power magnetoelectric magnetic field sensor

Abstract

A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

What is claimed as new and desired to be protected by Letters Patent of the United States is: 
     
         1 . An on-chip micro-resonator magnetic sensor, comprising:
 a doubly clamped magnetoelectric micro-beam resonator that generates a magnetically driven resonance shift;   a piezoelectric layer; and   a magnetostrictive layer;   wherein the magnetostrictive layer is strain coupled to the piezoelectric layer to form a micro-beam for the on-chip micro-resonator magnetic sensor.   
     
     
         2 . The magnetic sensor of  claim 1 , wherein the piezoelectric layer comprises AlN, PMN-PT, BTO, or any combination thereof. 
     
     
         3 . The magnetic sensor of  claim 1 , wherein the magnetostrictive layer comprises, Fe, Co, Ni, FeCo, FeCoV, FeGa, or any combination thereof. 
     
     
         4 . The magnetic sensor of  claim 1 , wherein the magnetic sensor has a sensitivity 10 10  Tesla/Hz 1/2  or less. 
     
     
         5 . The magnetic sensor of  claim 1 , wherein the magnetic sensor has a power dissipation of less than 10 mW. 
     
     
         6 . The magnetic sensor of  claim 1 , wherein the magnetic sensor has a power dissipation of about 0.1 mW.