Indium-gallium-nitride structures and devices

Abstract

InGaN layers characterized by an in-plane lattice constant within a range from 3.19 to 3.50 Å are disclosed. The InGaN layers are grown by coalescing InGaN grown on a plurality of GaN regions. The InGaN layers can be used to fabricate optical and electronic devices for use in light sources for illumination and display applications.

What is claimed is: 
     
         1 . A method of making a III-nitride semiconductor structure, wherein the method comprises:
 forming only one plurality of seed regions on a substrate; wherein,
 each seed region of the only one plurality of seed regions comprises a semiconductor material having a Wurtzite crystal structure; 
 each seed region of the only one plurality of seed regions has only one plurality of planar seed interfaces comprising a heterojunction underlying the InGaN region; 
 each planar seed interface of the only one plurality of planar seed interfaces has a crystallographically equivalent orientation and is characterized by a crystallographic plane; and 
 the crystallographic plane is not parallel to a (0001) crystallographic plane of the (0001) InGaN region; and 
   growing a semiconductor material on the plurality of planar seed interfaces to provide a (0001) InGaN region, wherein the (0001) InGaN region is characterized by an in-plane a-lattice constant, wherein the in-plane a-lattice constant is greater than 3.19 Å.