Light-emitting apparatus including sacrificial pattern

Abstract

A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover an outermost sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. The sacrificial pattern layer is located between the connection patterns, and the sacrificial pattern layer is overlapped with the pads in a normal direction of the substrate.

What is claimed is: 
     
         1 . A lighting-emitting apparatus, comprising:
 a substrate;   a plurality of pads disposed on the substrate;   a sacrificial pattern layer, disposed on the substrate and having an outermost sidewall; and   a light-emitting diode element, disposed on the sacrificial pattern layer, wherein the light-emitting diode element comprises:
 a first type semiconductor layer; 
 a second type semiconductor layer opposite to the first type semiconductor layer; 
 an active layer disposed between the first type semiconductor layer and the second type semiconductor layer; 
 a plurality of electrodes electrically connected to the first type semiconductor layer and the second type semiconductor layer respectively; and 
 a plurality of connection patterns respectively disposed on at least one of the electrodes and the pads, wherein materials of the connection patterns comprise hot fluidity conductive materials, and the connection patterns cover the outermost sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the pads and the electrodes, 
   wherein the sacrificial pattern layer is located between the connection patterns, and the sacrificial pattern layer is overlapped with the pads in a normal direction of the substrate.   
     
     
         2 . The light-emitting apparatus according to  claim 1 , wherein the active layer of the light-emitting diode element is disposed between the electrodes of the light-emitting diode element and the sacrificial pattern layer. 
     
     
         3 . The light-emitting apparatus according to  claim 1 , wherein the electrodes of the light-emitting diode element are disposed between the active layer of the light-emitting diode element and the sacrificial pattern layer. 
     
     
         4 . The light-emitting apparatus according to  claim 3 , wherein the light-emitting diode component further comprises:
 an insulating layer, disposed on the first type semiconductor layer and the second type semiconductor layer and having a plurality of openings respectively overlapping the first type semiconductor layer and the second type semiconductor layer, wherein the electrodes are respectively electrically connected to the first type semiconductor layer and the second type semiconductor layer through the openings of the insulating layer;   wherein the sacrificial pattern layer contacts the insulating layer of the light-emitting diode element and the connection patterns.   
     
     
         5 . The light-emitting apparatus according to  claim 3 , wherein a distance between a surface of one of the pads in contact with one of the connection patterns and the substrate is greater than a distance between a surface of another of the pads in contact with another one of the connection patterns and the substrate. 
     
     
         6 . The light-emitting apparatus according to  claim 3 , wherein a thickness of one of the pads is greater than a thickness of another one of the pads. 
     
     
         7 . The light-emitting apparatus according to  claim 3 , wherein a distance between a surface of one of the pads in contact with one of the connection patterns and the substrate is substantially equal to a distance between a surface of another of the pads and the substrate is contact with another of the connection patterns. 
     
     
         8 . The light-emitting apparatus according to  claim 3 , further comprising:
 an auxiliary conductive pattern, disposed on one of the pads and electrically connected to the one of the pads, wherein the auxiliary conductive pattern is disposed between the one of the pads and the corresponding connection pattern disposed on the one of the pads.   
     
     
         9 . The light-emitting apparatus according to  claim 8 , further comprising:
 a first dielectric layer, disposed on the pads and having a first contact via, wherein the auxiliary conductive pattern is disposed on the first dielectric layer and electrically connected to the one of the pads through the first contact via.   
     
     
         10 . The light-emitting apparatus according to  claim 9 , wherein the first dielectric layer further has a second contact via, the second contact via overlaps another one of the pads, and one of the connection patterns is electrically connected to the another one of the pads through the second contact via. 
     
     
         11 . The light-emitting apparatus according to  claim 1 , further comprising:
 a second dielectric layer, disposed on the pads and having a plurality of contact vias respectively overlapping the pads;   a plurality of interconnection patterns, disposed on the second dielectric layer, and electrically connected to the pads respectively through the contact vias of the second dielectric layer;   wherein the sacrificial pattern layer is disposed on the second dielectric layer, and the connection patterns of the light-emitting diode element are electrically connected to the interconnection patterns respectively.   
     
     
         12 . The light-emitting apparatus according to  claim 1 , wherein the sacrificial pattern layer serves as a bonding layer, and a material of the sacrificial pattern layer comprises a photoresist or a heat curing adhesive. 
     
     
         13 . The light-emitting apparatus according to  claim 1 , wherein each of the connection patterns has a curve surface. 
     
     
         14 . The light-emitting apparatus according to  claim 1 , wherein the sacrificial pattern layer is overlapped with the connection patterns in the normal direction of the substrate. 
     
     
         15 . The light-emitting apparatus according to  claim 1 , wherein a top surface and the outermost sidewall of the sacrificial pattern layer are completely covered by the first type semiconductor layer and the connection patterns so that no gap exists between the sacrificial pattern layer and the light-emitting diode element. 
     
     
         16 . The light-emitting apparatus according to  claim 1 , wherein the connection patterns separate the sacrificial pattern layer from contacting the electrodes.